EL

Effendi Leobandung

IBM: 476 patents #23 of 70,183Top 1%
Globalfoundries: 13 patents #279 of 4,424Top 7%
ET Elpis Technologies: 3 patents #8 of 121Top 7%
TE Tessera: 2 patents #162 of 271Top 60%
UM University of Minnesota: 1 patents #1,216 of 2,951Top 45%
📍 Stormville, NY: #1 of 88 inventorsTop 2%
🗺 New York: #24 of 115,490 inventorsTop 1%
Overall (All Time): #396 of 4,157,543Top 1%
496
Patents All Time

Issued Patents All Time

Showing 326–350 of 496 patents

Patent #TitleCo-InventorsDate
9577096 Salicide formation on replacement metal gate finFet devices Soon-Cheon Seo, Tenko Yamashita, Chun-Chen Yeh 2017-02-21
9576096 Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Theodorus E. Standaert +1 more 2017-02-21
9570554 Robust gate spacer for semiconductor devices Tenko Yamashita 2017-02-14
9570449 Metal strap for DRAM/FinFET combination 2017-02-14
9564526 Group III nitride integration with CMOS technology Can Bayram, Christopher P. D'Emic, William J. Gallagher, Devendra K. Sadana 2017-02-07
9564506 Low end parasitic capacitance FinFET 2017-02-07
9553166 Asymmetric III-V MOSFET on silicon substrate Cheng-Wei Cheng, Pranita Kerber, Amlan Majumdar, Renee T. Mo, Yanning Sun 2017-01-24
9553107 Shallow extension junction Kevin K. Chan, Pouya Hashemi, Dae-Gyu Park, Min Yang 2017-01-24
9548358 Dual fill silicon-on-nothing field effect transistor 2017-01-17
9548421 Optoelectronic devices with back contact Ning Li, Tak H. Ning, Jean-Olivier Plouchart, Devendra K. Sadana 2017-01-17
9543463 Signal distribution in integrated circuit using optical through silicon via James D. Warnock, Dieter Wendel 2017-01-10
9536832 Junctionless back end of the line via contact 2017-01-03
9536775 Aspect ratio for semiconductor on insulator 2017-01-03
9536739 Self-cut sidewall image transfer process 2017-01-03
9530665 Protective trench layer and gate spacer in finFET devices Richard S. Wise 2016-12-27
9525069 Structure and method to form a FinFET device Andres Bryant, Jeffrey B. Johnson, Tenko Yamashita 2016-12-20
9515165 III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture Cheng-Wei Cheng, Pranita Kerber, Amlan Majumdar 2016-12-06
9515090 Method to form dual channel group III-V and Si/Ge FINFET CMOS and integrated circuit fabricated using the method Daniele Caimi, Lukas Czornomaz, Jean Fompeyrine 2016-12-06
9515070 Replacement metal gate David V. Horak, Stefan Schmitz, Junli Wang 2016-12-06
9508833 Punch through stopper for semiconductor device Tenko Yamashita 2016-11-29
9502506 Structure for FinFET fins Tenko Yamashita 2016-11-22
9502500 Forming multi-stack nanowires using a common release material 2016-11-22
9496447 Signal distribution in integrated circuit using optical through silicon via James D. Warnock, Dieter Wendel 2016-11-15
9496399 FinFET devices with multiple channel lengths Tenko Yamashita 2016-11-15
9496379 Method and structure for III-V FinFET 2016-11-15