EL

Effendi Leobandung

IBM: 476 patents #23 of 70,183Top 1%
Globalfoundries: 13 patents #279 of 4,424Top 7%
ET Elpis Technologies: 3 patents #8 of 121Top 7%
TE Tessera: 2 patents #162 of 271Top 60%
UM University of Minnesota: 1 patents #1,216 of 2,951Top 45%
📍 Stormville, NY: #1 of 88 inventorsTop 2%
🗺 New York: #24 of 115,490 inventorsTop 1%
Overall (All Time): #396 of 4,157,543Top 1%
496
Patents All Time

Issued Patents All Time

Showing 376–400 of 496 patents

Patent #TitleCo-InventorsDate
9362177 Nanowire semiconductor device Wilfried Haensch, Tenko Yamashita 2016-06-07
9355914 Integrated circuit having dual material CMOS integration and method to fabricate same 2016-05-31
9343325 Trilayer SIT process with transfer layer for FINFET patterning 2016-05-17
9337313 Spacerless fin device with reduced parasitic resistance and capacitance and method to fabricate same 2016-05-10
9337148 Chip with programmable shelf life 2016-05-10
9331076 Group III nitride integration with CMOS technology Can Bayram, Christopher P. D'Emic, William J. Gallagher, Devendra K. Sadana 2016-05-03
9330984 CMOS fin integration on SOI substrate Tenko Yamashita 2016-05-03
9324710 Very planar gate cut post replacement gate process 2016-04-26
9318492 Floating body storage device employing a charge storage trench 2016-04-19
9318392 Method to form SOI fins on a bulk substrate with suspended anchoring 2016-04-19
9318318 3D atomic layer gate or junction extender Kevin K. Chan, Pouya Hashemi, Dae-Gyu Park, Min Yang 2016-04-19
9306038 Shallow extension junction Kevin K. Chan, Pouya Hashemi, Dae-Gyu Park, Min Yang 2016-04-05
9305964 Optoelectronic devices with back contact Ning Li, Tak H. Ning, Jean-Olivier Plouchart, Devendra K. Sadana 2016-04-05
9299841 Semiconductor devices and methods of manufacture 2016-03-29
9293374 Self-aligned low defect segmented III-V finFET 2016-03-22
9276115 Semiconductor devices and methods of manufacture 2016-03-01
9263583 Integrated finFET-BJT replacement metal gate Jin Cai, Tak H. Ning 2016-02-16
9263512 Memory cell with integrated III-V device 2016-02-16
9257545 Stacked nanowire device with variable number of nanowire channels 2016-02-09
9257289 Lowering parasitic capacitance of replacement metal gate processes Vijay Narayanan 2016-02-09
9252157 Method to form group III-V and Si/Ge FINFET on insulator and integrated circuit fabricated using the method Lukas Czornomaz, Jean Fompeyrine 2016-02-02
9245846 Chip with programmable shelf life 2016-01-26
9236328 Electrical and optical through-silicon-via (TSV) 2016-01-12
9231080 Replacement metal gate David V. Horak, Stefan Schmitz, Junli Wang 2016-01-05
9224604 Device and method for forming sharp extension region with controllable junction depth and lateral overlap Isaac Lauer, Ghavam G. Shahidi 2015-12-29