Issued Patents All Time
Showing 301–325 of 496 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9685410 | Semiconductor device security | — | 2017-06-20 |
| 9679775 | Selective dopant junction for a group III-V semiconductor device | Kevin K. Chan, Marinus Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Deborah A. Neumayer +3 more | 2017-06-13 |
| 9673056 | Method to improve finFET cut overlay | Tenko Yamashita | 2017-06-06 |
| 9666748 | Integrated on chip detector and zero waveguide module structure for use in DNA sequencing | — | 2017-05-30 |
| 9660069 | Group III nitride integration with CMOS technology | Can Bayram, Christopher P. D'Emic, William J. Gallagher, Devendra K. Sadana | 2017-05-23 |
| 9653464 | Asymmetric band gap junctions in narrow band gap MOSFET | — | 2017-05-16 |
| 9653347 | Vertical air gap subtractive etch back end metal | — | 2017-05-16 |
| 9647091 | Annealed metal source drain overlapping the gate | — | 2017-05-09 |
| 9640442 | CMOS fin integration on SOI substrate | Tenko Yamashita | 2017-05-02 |
| 9640536 | Method to make dual material finFET on same substrate | — | 2017-05-02 |
| 9627266 | Dual-semiconductor complementary metal-oxide-semiconductor device | Sanghoon Lee, Renee T. Mo, Yanning Sun | 2017-04-18 |
| 9627478 | Integrated vertical nanowire memory | — | 2017-04-18 |
| 9627276 | Self-aligned low defect segmented III-V finFET | — | 2017-04-18 |
| 9627271 | III-V compound semiconductor channel material formation on mandrel after middle-of-the-line dielectric formation | Renee T. Mo | 2017-04-18 |
| 9627482 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Yanning Sun | 2017-04-18 |
| 9620643 | Reducing parasitic capacitance and resistance in finFET | — | 2017-04-11 |
| 9614042 | Heterojunction tunnel field effect transistor fabrication using limited lithography steps | — | 2017-04-04 |
| 9613963 | Dual material finFET on single substrate | — | 2017-04-04 |
| 9608099 | Nanowire semiconductor device | Wilfried Haensch, Tenko Yamashita | 2017-03-28 |
| 9601599 | Aspect ratio for semiconductor on insulator | — | 2017-03-21 |
| 9601476 | Optoelectronics and CMOS integration on GOI substrate | Ning Li, Devendra K. Sadana | 2017-03-21 |
| 9601385 | Method of making a dual strained channel semiconductor device | — | 2017-03-21 |
| 9595445 | Floating body storage device employing a charge storage trench | — | 2017-03-14 |
| 9590057 | Reduced parasitic capacitance with slotted contact | — | 2017-03-07 |
| 9590085 | Method and structure for III-V FinFET | — | 2017-03-07 |