DS

Devendra K. Sadana

IBM: 797 patents #8 of 70,183Top 1%
Globalfoundries: 22 patents #130 of 4,424Top 3%
KT King Abdulaziz City For Science And Technology: 14 patents #6 of 573Top 2%
BC Bay Zu Precision Co.: 7 patents #1 of 12Top 9%
EC Egypt Nanotechnology Center: 3 patents #12 of 29Top 45%
MT Matheson Tri-Gas: 3 patents #10 of 47Top 25%
HL Hefechip Corporation Limited: 2 patents #10 of 16Top 65%
GU George Washington University: 2 patents #62 of 325Top 20%
NV NVIDIA: 1 patents #4,316 of 7,811Top 60%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
IM International Machines: 1 patents #1 of 34Top 3%
MIT: 1 patents #4,386 of 9,367Top 50%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
UE US Dept of Energy: 1 patents #1,355 of 5,099Top 30%
📍 Pleasantville, NY: #1 of 229 inventorsTop 1%
🗺 New York: #7 of 115,490 inventorsTop 1%
Overall (All Time): #99 of 4,157,543Top 1%
826
Patents All Time

Issued Patents All Time

Showing 726–750 of 826 patents

Patent #TitleCo-InventorsDate
7592671 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek +1 more 2009-09-22
7566482 SOI by oxidation of porous silicon Kwang Su Choe, Keith E. Fogel 2009-07-28
7550370 Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density Huajie Chen, Stephen W. Bedell, Dan M. Mocuta 2009-06-23
7550369 Method for fabricating low-defect-density changed orientation Si Joel P. de Souza, Keith E. Fogel, John A. Ott, Katherine L. Saenger 2009-06-23
7524740 Localized strain relaxation for strained Si directly on insulator Yaocheng Liu, Kern Rim 2009-04-28
7507988 Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer Stephen W. Bedell, Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel 2009-03-24
7504311 Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Steven J. Koester, Ghavam G. Shahidi 2009-03-17
7501318 Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal Stephen W. Bedell, Keith E. Fogel, Ghavam G. Shahidi 2009-03-10
7498235 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates Tze-Chiang Chen, Guy M. Cohen, Alexander Reznicek, Ghavam G. Shahidi 2009-03-03
7494852 Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits Stephen W. Bedell, Bruce B. Doris 2009-02-24
7492008 Control of buried oxide in SIMOX Stephen Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee, Siegfried Maurer +2 more 2009-02-17
7485539 Strained semiconductor-on-insulator (sSOI) by a simox method Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek +1 more 2009-02-03
7482243 Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique Diane C. Boyd, Bruce B. Doris, Meikei Ieong 2009-01-27
7473587 High-quality SGOI by oxidation near the alloy melting temperature Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel 2009-01-06
7473626 Control of poly-Si depletion in CMOS via gas phase doping Yaocheng Liu, Alexander Reznicek 2009-01-06
7465992 Field effect transistor with mixed-crystal-orientation channel and source/drain regions Joel P. Desouza, Katherine L. Saenger, Chun-Yung Sung, Min Yang, Haizhou Yin 2008-12-16
7442993 Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel, Effendi Leobandung 2008-10-28
7402466 Strained silicon CMOS on hybrid crystal orientations Kevin K. Chan, Meikei Ieong, Alexander Reznicek, Leathen Shi, Min Yang 2008-07-22
7365399 Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost Joel P. de Souza, Keith E. Fogel, Brian J. Greene, Haining Yang 2008-04-29
7358166 Relaxed, low-defect SGOI for strained Si CMOS applications Paul D. Agnello, Stephen W. Bedell, Robert H. Dennard, Anthony G. Domenicucci, Keith E. Fogel 2008-04-15
7348253 High-quality SGOI by annealing near the alloy melting point Stephen W. Bedell, Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Richard J. Murphy 2008-03-25
7348633 Hybrid crystallographic surface orientation substrate having one or more SOI regions and/or bulk semiconductor regions Junedong Lee, Dominic J. Schepis, Ghavam G. Shahidi 2008-03-25
7329596 Method for tuning epitaxial growth by interfacial doping and structure including same Katherina Babich, Bruce B. Doris, David R. Medeiros 2008-02-12
7317226 Patterned SOI by oxygen implantation and annealing Keith E. Fogel, Mark C. Hakey, Steven J. Holmes, Ghavam G. Shahidi 2008-01-08
7315065 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates Tze-Chiang Chen, Guy M. Cohen, Alexander Reznicek, Ghavam G. Shahidi 2008-01-01