Issued Patents All Time
Showing 751–775 of 826 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7304328 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion | Stephen W. Bedell, Keith E. Fogel | 2007-12-04 |
| 7285473 | Method for fabricating low-defect-density changed orientation Si | Joel Pereira de Souza, Keith E. Fogel, John A. Ott, Katherine L. Saenger | 2007-10-23 |
| 7282425 | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS | Steven J. Koester, Ghavam G. Shahidi | 2007-10-16 |
| 7253034 | Dual SIMOX hybrid orientation technology (HOT) substrates | Kevin K. Chan, Joel P. de Souza, Alexander Reznicek, Katherine L. Saenger | 2007-08-07 |
| 7247569 | Ultra-thin Si MOSFET device structure and method of manufacture | Diane C. Boyd, Bruce B. Doris, Meikei Ieong | 2007-07-24 |
| 7247546 | Method of forming strained silicon materials with improved thermal conductivity | Stephen W. Bedell, Huajie Chen, Keith E. Fogel, Ryan Mitchell | 2007-07-24 |
| 7172930 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer | Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek +1 more | 2007-02-06 |
| 7169226 | Defect reduction by oxidation of silicon | Stephen W. Bedell, Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel | 2007-01-30 |
| 7141115 | Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers | Stephen W. Bedell, Keith E. Fogel | 2006-11-28 |
| 7141457 | Method to form Si-containing SOI and underlying substrate with different orientations | Meikei Ieong, Ghavam G. Shahidi | 2006-11-28 |
| 7125458 | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer | Stephen W. Bedell, Kwang Su Choe, Keith E. Fogel | 2006-10-24 |
| 7115463 | Patterning SOI with silicon mask to create box at different depths | Dominic J. Schepis, Michael D. Steigerwalt | 2006-10-03 |
| 7087965 | Strained silicon CMOS on hybrid crystal orientations | Kevin K. Chan, Meikei Ieong, Alexander Reznicek, Leathen Shi, Min Yang | 2006-08-08 |
| 7084460 | Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates | Tze-Chiang Chen, Guy M. Cohen, Alexander Reznicek, Ghavam G. Shahidi | 2006-08-01 |
| 7084050 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Ghavam G. Shahidi | 2006-08-01 |
| 7074686 | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications | Stephen W. Bedell, Jack O. Chu, Keith E. Fogel, Steven J. Koester | 2006-07-11 |
| 7075150 | Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique | Diane C. Boyd, Bruce B. Doris, Meikei Ieong | 2006-07-11 |
| 7067371 | Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness | Tak H. Ning | 2006-06-27 |
| 7049660 | High-quality SGOI by oxidation near the alloy melting temperature | Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel | 2006-05-23 |
| 7026249 | SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth | Stephen W. Bedell, Huajie Chen, Keith E. Fogel | 2006-04-11 |
| 6991998 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer | Stephen W. Bedell, Anthony G. Domenicucci, Keith E. Fogel, Effendi Leobandung | 2006-01-31 |
| 6989058 | Use of thin SOI to inhibit relaxation of SiGe layers | Stephen W. Bedell, Huajie Chen, Keith E. Fogel | 2006-01-24 |
| 6967376 | Divot reduction in SIMOX layers | Stephen Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee | 2005-11-22 |
| 6958286 | Method of preventing surface roughening during hydrogen prebake of SiGe substrates | Huajie Chen, Dan M. Mocuta, Richard J. Murphy, Stephan W. Bedell | 2005-10-25 |
| 6946373 | Relaxed, low-defect SGOI for strained Si CMOS applications | Paul D. Agnello, Stephen W. Bedell, Robert H. Dennard, Anthony G. Domenicucci, Keith E. Fogel | 2005-09-20 |