Issued Patents All Time
Showing 701–725 of 826 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8128749 | Fabrication of SOI with gettering layer | Junedong Lee, Dominic J. Schepis | 2012-03-06 |
| 8053759 | Ion implantation for suppression of defects in annealed SiGe layers | Stephen W. Bedell, Huajie Chen, Keith E. Fogel, Ghavam G. Shahidi | 2011-11-08 |
| 8053810 | Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same | Tymon Barwicz | 2011-11-08 |
| 8053330 | Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide | Joel P. de Souza, John A. Ott, Alexander Reznicek, Katherine L. Saenger | 2011-11-08 |
| 8039371 | Reduced defect semiconductor-on-insulator hetero-structures | Stephen W. Bedell, Jeehwan Kim, Alexander Reznicek | 2011-10-18 |
| 7994028 | Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same | Tymon Barwicz | 2011-08-09 |
| 7993990 | Multiple crystallographic orientation semiconductor structures | Shreesh Narasimha, Paul D. Agnello, Xiaomeng Chen, Judson R. Holt, Mukesh V. Khare +1 more | 2011-08-09 |
| 7964896 | Buried channel MOSFET using III-V compound semiconductors and high k gate dielectrics | Edward W. Kiewra, Steven J. Koester, Ghavam G. Shahidi, Yanning Sun | 2011-06-21 |
| 7935612 | Layer transfer using boron-doped SiGe layer | Stephen W. Bedell, Keith E. Fogel, Daniel A. Inns, Jeehwan Kim, James Vichiconti | 2011-05-03 |
| 7914619 | Thick epitaxial silicon by grain reorientation annealing and applications thereof | Joel P. de Souza, Keith E. Fogel, Daniel A. Inns, Katherine L. Saenger | 2011-03-29 |
| 7897444 | Strained semiconductor-on-insulator (sSOI) by a simox method | Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek +1 more | 2011-03-01 |
| 7880241 | Low-temperature electrically activated gate electrode and method of fabricating same | John C. Arnold, Stephen W. Bedell, Keith E. Fogel | 2011-02-01 |
| 7842940 | Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost | Joel P. de Souza, Keith E. Fogel, Brian J. Greene, Haining Yang | 2010-11-30 |
| 7833884 | Strained semiconductor-on-insulator by Si:C combined with porous process | Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek | 2010-11-16 |
| 7816664 | Defect reduction by oxidation of silicon | Stephen W. Bedell, Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel | 2010-10-19 |
| 7790593 | Method for tuning epitaxial growth by interfacial doping and structure including same | Katherina Babich, Bruce B. Doris, David R. Medeiros | 2010-09-07 |
| 7785982 | Structures containing electrodeposited germanium and methods for their fabrication | Stephen W. Bedell, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Katherine L. Saenger | 2010-08-31 |
| 7772096 | Formation of SOI by oxidation of silicon with engineered porosity gradient | Joel P. Desouza, Keith E. Fogel, Alexander Reznicek | 2010-08-10 |
| 7759772 | Method to form Si-containing SOI and underlying substrate with different orientations | Meikei Ieong, Ghavam G. Shahidi | 2010-07-20 |
| 7749869 | Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites | Joel P. de Souza, Harold J. Hovel, Daniel A. Inns, Ghavam G. Shahidi | 2010-07-06 |
| 7718231 | Thin buried oxides by low-dose oxygen implantation into modified silicon | Kwang Su Choe, Keith E. Fogel, Siegfried Maurer, Ryan Mitchell | 2010-05-18 |
| 7691688 | Strained silicon CMOS on hybrid crystal orientations | Kevin K. Chan, Meikei Ieong, Alexander Reznicek, Leathen Shi, Min Yang | 2010-04-06 |
| 7682917 | Disposable metallic or semiconductor gate spacer | Stephen W. Bedell, Michael P. Chudzik, William K. Henson, Naim Moumen, Vijay Narayanan +2 more | 2010-03-23 |
| 7679141 | High-quality SGOI by annealing near the alloy melting point | Stephen W. Bedell, Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Richard J. Murphy | 2010-03-16 |
| 7655551 | Control of poly-Si depletion in CMOS via gas phase doping | Yaocheng Liu, Alexander Reznicek | 2010-02-02 |