Issued Patents All Time
Showing 101–125 of 165 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10361117 | Selective ILD deposition for fully aligned via with airgap | Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Michael Rizzolo, Hosadurga Shobha | 2019-07-23 |
| 10361079 | Multi-angled deposition and masking for custom spacer trim and selected spacer removal | Marc A. Bergendahl, Sean D. Burns, Lawrence A. Clevenger, Michael Rizzolo | 2019-07-23 |
| 10361157 | Method of manufacturing self-aligned interconnects by deposition of a non-conformal air-gap forming layer having an undulated upper surface | Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo | 2019-07-23 |
| 10347825 | Selective deposition and nitridization of bottom electrode metal for MRAM applications | Benjamin D. Briggs, Joe Lee, Michael Rizzolo, Chih-Chao Yang | 2019-07-09 |
| 10312434 | Selective deposition and nitridization of bottom electrode metal for MRAM applications | Benjamin D. Briggs, Joe Lee, Michael Rizzolo, Chih-Chao Yang | 2019-06-04 |
| 10283586 | Capacitors | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-05-07 |
| 10256191 | Hybrid dielectric scheme for varying liner thickness and manganese concentration | Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Takeshi Nogami, Michael Rizzolo | 2019-04-09 |
| 10256171 | Air gap and air spacer pinch off | Griselda Bonilla, Elbert E. Huang, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini | 2019-04-09 |
| 10242933 | Air gap and air spacer pinch off | Griselda Bonilla, Elbert E. Huang, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini | 2019-03-26 |
| 10229851 | Self-forming barrier for use in air gap formation | Benjamin D. Briggs, Elbert E. Huang, Takeshi Nogami | 2019-03-12 |
| 10229967 | High-density MIM capacitors | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo | 2019-03-12 |
| 10177076 | Air gap and air spacer pinch off | Griselda Bonilla, Elbert E. Huang, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini | 2019-01-08 |
| 10170416 | Selective blocking boundary placement for circuit locations requiring electromigration short-length | Benjamin D. Briggs, Elbert E. Huang, Joe Lee | 2019-01-01 |
| 10170540 | Capacitors | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2019-01-01 |
| 10170411 | Airgap protection layer for via alignment | Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo | 2019-01-01 |
| 10121661 | Self aligned pattern formation post spacer etchback in tight pitch configurations | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Sivananda K. Kanakasabapathy +2 more | 2018-11-06 |
| 10109579 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo | 2018-10-23 |
| 10109455 | System and method for performing nano beam diffraction analysis | Marc A. Bergendahl, James J. Demarest, Roger QUON, Christopher J. Waskiewicz | 2018-10-23 |
| 10083905 | Skip-vias bypassing a metallization level at minimum pitch | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo | 2018-09-25 |
| 10083864 | Self aligned conductive lines with relaxed overlay | Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann Mignot +2 more | 2018-09-25 |
| 10083908 | BEOL vertical fuse formed over air gap | Marc A. Bergendahl, James J. Demarest, Christopher J. Waskiewicz | 2018-09-25 |
| 10056290 | Self-aligned pattern formation for a semiconductor device | Sean D. Burns, Lawrence A. Clevenger, Nelson Felix, Sivananda K. Kanakasabapathy, Nicole Saulnier | 2018-08-21 |
| 10002762 | Multi-angled deposition and masking for custom spacer trim and selected spacer removal | Marc A. Bergendahl, Sean D. Burns, Lawrence A. Clevenger, Michael Rizzolo | 2018-06-19 |
| 9997454 | BEOL vertical fuse formed over air gap | Marc A. Bergendahl, James J. Demarest, Christopher J. Waskiewicz | 2018-06-12 |
| 9997451 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo | 2018-06-12 |