BD

Bartlet H. DeProspo

IBM: 28 patents #3,676 of 70,183Top 6%
TE Tessera: 3 patents #129 of 271Top 50%
SD Saras Micro Devices: 2 patents #3 of 9Top 35%
AS Adeia Semiconductor Solutions: 1 patents #22 of 57Top 40%
Overall (All Time): #99,662 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 25 most recent of 34 patents

Patent #TitleCo-InventorsDate
12191346 Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor device Jose F. Solis Camara, Ryan Wong 2025-01-07
12183692 Embedded inductors and integrated voltage regulators for packaged semiconductor devices Carlos Riera, Urmi Ray 2024-12-31
11955424 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2024-04-09
11574864 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2023-02-07
11056429 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2021-07-06
10912986 Dynamic rigidity mechanism Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2021-02-09
10784156 Self-aligned airgaps with conductive lines and vias Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2020-09-22
10770348 Location-specific laser annealing to improve interconnect microstructure Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2020-09-08
10752039 Structure of implementing a directed self-assembled security pattern Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2020-08-25
10629529 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2020-04-21
10559498 Location-specific laser annealing to improve interconnect microstructure Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2020-02-11
10515894 Enhanced self-alignment of vias for a semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Nicole Saulnier 2019-12-24
10366920 Location-specific laser annealing to improve interconnect microstructure Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2019-07-30
10366952 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2019-07-30
10315451 Structure, system, method, and recording medium of implementing a directed self-assembled security pattern Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2019-06-11
10229967 High-density MIM capacitors Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2019-03-12
10211151 Enhanced self-alignment of vias for asemiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Nicole Saulnier 2019-02-19
10150323 Structure, system, method, and recording medium of implementing a directed self-assembled security pattern Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2018-12-11
10109579 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-10-23
10099108 Dynamic rigidity mechanism Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo 2018-10-16
10083905 Skip-vias bypassing a metallization level at minimum pitch Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-09-25
9997451 Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-06-12
9911651 Skip-vias bypassing a metallization level at minimum pitch Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-03-06
9899256 Self-aligned airgaps with conductive lines and vias Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-02-20
9899338 Structure and fabrication method for enhanced mechanical strength crack stop Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Michael Rizzolo 2018-02-20