Issued Patents All Time
Showing 251–275 of 401 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10658495 | Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact | Injo Ok, Soon-Cheon Seo, Sungjae Lee | 2020-05-19 |
| 10658582 | Vertical resistive processing unit with air gap | Takashi Ando, Pouya Hashemi | 2020-05-19 |
| 10651378 | Resistive random-access memory | Kangguo Cheng, Juntao Li, Peng Xu | 2020-05-12 |
| 10647827 | Polymer composite strengthened with carbon fiber surface-modified by plasma treatment and method for producing polymer composite | Dae-Soon Lim, Eung Seok Lee | 2020-05-12 |
| 10643899 | Gate stack optimization for wide and narrow nanosheet transistor devices | Jingyun Zhang, Takashi Ando | 2020-05-05 |
| 10644138 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2020-05-05 |
| 10636887 | Self-limiting fin spike removal | Kangguo Cheng, Juntao Li, Peng Xu | 2020-04-28 |
| 10636874 | External resistance reduction with embedded bottom source/drain for vertical transport FET | Reinaldo Vega, Jingyun Zhang, Miaomiao Wang | 2020-04-28 |
| 10629499 | Method and structure for forming a vertical field-effect transistor using a replacement metal gate process | Kangguo Cheng, Kisik Choi | 2020-04-21 |
| 10622489 | Vertical tunnel FET with self-aligned heterojunction | Chun Wing Yeung, Shogo Mochizuki, Ruqiang Bao | 2020-04-14 |
| 10622466 | Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2020-04-14 |
| 10622208 | Lateral semiconductor nanotube with hexagonal shape | Juntao Li, Kangguo Cheng, Peng Xu | 2020-04-14 |
| 10615082 | VFET metal gate patterning for vertical transport field effect transistor | Brent A. Anderson, Ruqiang Bao, Kangguo Cheng, Hemanth Jagannathan, Junli Wang | 2020-04-07 |
| 10615083 | Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device | Ruqiang Bao, Hemanth Jagannathan, Shogo Mochizuki | 2020-04-07 |
| 10615043 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Vijay Narayanan | 2020-04-07 |
| 10608114 | Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel | Injo Ok, Soon-Cheon Seo | 2020-03-31 |
| 10608096 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Peng Xu, Heng Wu | 2020-03-31 |
| 10607990 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Takashi Ando, Ruqiang Bao, Hemanth Jagannathan | 2020-03-31 |
| 10600695 | Channel strain formation in vertical transport FETS with dummy stressor materials | Kangguo Cheng, Shogo Mochizuki, Juntao Li | 2020-03-24 |
| 10600606 | Vertical vacuum channel transistor with minimized air gap between tip and gate | Injo Ok, Soon-Cheon Seo, Seyoung Kim | 2020-03-24 |
| 10600883 | Vertical transport FETs having a gradient threshold voltage | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2020-03-24 |
| 10600885 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2020-03-24 |
| 10600889 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Juntao Li, Peng Xu | 2020-03-24 |
| 10593673 | Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS | Xin Miao, Jingyun Zhang, Alexander Reznicek | 2020-03-17 |
| 10593771 | Vertical fin-type bipolar junction transistor with self-aligned base contact | Seyoung Kim, Injo Ok, Soon-Cheon Seo | 2020-03-17 |