Issued Patents All Time
Showing 226–250 of 304 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10008577 | Methods of forming an air-gap spacer on a semiconductor device and the resulting device | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2018-06-26 |
| 10002932 | Self-aligned contact protection using reinforced gate cap and spacer portions | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2018-06-19 |
| 9991131 | Dual mandrels to enable variable fin pitch | Min Gyu Sung, Ruilong Xie | 2018-06-05 |
| 9984919 | Inverted damascene interconnect structures | Xunyuan Zhang, Yongan Xu, Peng Xu, Yann Mignot | 2018-05-29 |
| 9966456 | Methods of forming gate electrodes on a vertical transistor device | Steven Bentley, Hoon Kim, Min Gyu Sung, Ruilong Xie | 2018-05-08 |
| 9953879 | Preventing oxidation defects in strain-relaxed fins by reducing local gap fill voids | Min Gyu Sung, Hoon Kim, Ruilong Xie | 2018-04-24 |
| 9947589 | Methods of forming a gate contact for a transistor above an active region and the resulting device | Ruilong Xie, Lars Liebmann, Andre P. Labonte, Nigel G. Cave, Mark V. Raymond | 2018-04-17 |
| 9947804 | Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure | Julien Frougier, Min Gyu Sung, Ruilong Xie, Steven Bentley | 2018-04-17 |
| 9929048 | Middle of the line (MOL) contacts with two-dimensional self-alignment | Ruilong Xie, Andre P. Labonte, Lars Liebmann | 2018-03-27 |
| 9911619 | Fin cut with alternating two color fin hardmask | Ruilong Xie, Hoon Kim, Catherine B. Labelle, Lars Liebmann, Min Gyu Sung | 2018-03-06 |
| 9899321 | Methods of forming a gate contact for a semiconductor device above the active region | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2018-02-20 |
| 9892961 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta +2 more | 2018-02-13 |
| 9875940 | Methods for forming transistor devices with different threshold voltages and the resulting devices | Hoon Kim, Ruilong Xie, Min Gyu Sung | 2018-01-23 |
| 9859125 | Block patterning method enabling merged space in SRAM with heterogeneous mandrel | Min Gyu Sung, Ruilong Xie, Hoon Kim, Kwan-Yong Lim | 2018-01-02 |
| 9847390 | Self-aligned wrap-around contacts for nanosheet devices | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2017-12-19 |
| 9847418 | Methods of forming fin cut regions by oxidizing fin portions | Kwan-Yong Lim, Min Gyu Sung | 2017-12-19 |
| 9837404 | Methods, apparatus and system for STI recess control for highly scaled finFET devices | Min Gyu Sung, Hoon Kim, Ruilong Xie, Kwan-Yong Lim | 2017-12-05 |
| 9831132 | Methods for forming fin structures | Min Gyu Sung, Hoon Kim, Ruilong Xie | 2017-11-28 |
| 9824920 | Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices | Ruilong Xie, Hoon Kim, Min Gyu Sung | 2017-11-21 |
| 9818836 | Gate cut method for replacement metal gate integration | Min Gyu Sung, Ruilong Xie, Dong-Ick Lee | 2017-11-14 |
| 9799748 | Method of forming inner spacers on a nano-sheet/wire device | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2017-10-24 |
| 9780208 | Method and structure of forming self-aligned RMG gate for VFET | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2017-10-03 |
| 9780197 | Method of controlling VFET channel length | Ruilong Xie, Min Gyu Sung, Hoon Kim | 2017-10-03 |
| 9761495 | Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devices | Ruilong Xie, Min Gyu Sung, Catherine B. Labelle, Hoon Kim | 2017-09-12 |
| 9741623 | Dual liner CMOS integration methods for FinFET devices | Min Gyu Sung, Ruilong Xie, Hoon Kim | 2017-08-22 |