Issued Patents All Time
Showing 51–70 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8836037 | Structure and method to form input/output devices | Takashi Ando, Min Dai, Martin M. Frank, Shahab Siddiqui | 2014-09-16 |
| 8815684 | Bulk finFET with super steep retrograde well | Jin Cai, Kevin K. Chan, Robert H. Dennard, Bruce B. Doris, Ramachandran Muralidhar +1 more | 2014-08-26 |
| 8809872 | Bulk finFET with super steep retrograde well | Jin Cai, Kevin K. Chan, Robert H. Dannard, Bruce B. Doris, Ramachandran Muralidhar | 2014-08-19 |
| 8722548 | Structures and techniques for atomic layer deposition | Shintaro Aoyama, Robert D. Clark, Steven P. Consiglio, Marinus Hopstaken, Hemanth Jagannathan +4 more | 2014-05-13 |
| 8713490 | Managing aging of silicon in an integrated circuit device | Malcolm S. Allen-Ware, Ronald J. Bolam, Alan J. Drake, Charles R. Lefurgy, Steven W. Mittl +1 more | 2014-04-29 |
| 8569844 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Vijay Narayanan, Vamsi K. Paruchuri | 2013-10-29 |
| 8383483 | High performance CMOS circuits, and methods for fabricating same | John C. Arnold, Glenn A. Biery, Alessandro C. Callegari, Tze-Chiang Chen, Michael P. Chudzik +7 more | 2013-02-26 |
| 8035173 | CMOS transistors with differential oxygen content high-K dielectrics | Huiming Bu, Eduard A. Cartier, Bruce B. Doris, Young-Hee Kim, Vijay Narayanan +2 more | 2011-10-11 |
| 7999323 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Bruce B. Doris, Rajarao Jammy, Young-Hee Kim +3 more | 2011-08-16 |
| 7880243 | Simple low power circuit structure with metal gate and high-k dielectric | Bruce B. Doris, Eduard A. Cartier, Vijay Narayanan, Vamsi K. Paruchuri | 2011-02-01 |
| 7858500 | Low threshold voltage semiconductor device with dual threshold voltage control means | Eduard A. Cartier, Matthew W. Copel, Martin M. Frank, Evgeni Gousev, Paul C. Jamison +2 more | 2010-12-28 |
| 7807525 | Low power circuit structure with metal gate and high-k dielectric | Bruce B. Doris, Eduard A. Cartier, Vijay Narayanan, Vamsi K. Paruchuri | 2010-10-05 |
| 7723798 | Low power circuit structure with metal gate and high-k dielectric | Bruce B. Doris, Eduard A. Cartier, Vijay Narayanan, Vamsi K. Paruchuri | 2010-05-25 |
| 7709902 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Vijay Narayanan, Vamsi K. Paruchuri | 2010-05-04 |
| 7696036 | CMOS transistors with differential oxygen content high-k dielectrics | Huiming Bu, Eduard A. Cartier, Bruce B. Doris, Young-Hee Kim, Vijay Narayanan +2 more | 2010-04-13 |
| 7666732 | Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Vijay Narayanan, Vamsi K. Paruchuri | 2010-02-23 |
| 7655994 | Low threshold voltage semiconductor device with dual threshold voltage control means | Eduard A. Cartier, Mathew W. Copel, Martin M. Frank, Evgeni Gousev, Paul C. Jamison +2 more | 2010-02-02 |
| 7611979 | Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks | Alessandro C. Callegari, Michael P. Chudzik, Renee T. Mo, Vijay Narayanan, Dae-Gyu Park +2 more | 2009-11-03 |
| 7598545 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Bruce B. Doris, Rajarao Jammy, Young-Hee Kim +3 more | 2009-10-06 |
| 7432567 | Metal gate CMOS with at least a single gate metal and dual gate dielectrics | Bruce B. Doris, Young-Hee Kim, Vijay Narayanan, Vamsi K. Paruchuri | 2008-10-07 |