Issued Patents All Time
Showing 651–675 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10008563 | Dielectric with air gaps for use in semiconductor devices | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2018-06-26 |
| 10008507 | Metal FinFET anti-fuse | Praneet Adusumilli, Oscar van der Straten, Miaomiao Wang, Chih-Chao Yang | 2018-06-26 |
| 10002948 | FinFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Dominic J. Schepis | 2018-06-19 |
| 10002926 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng, Pouya Hashemi | 2018-06-19 |
| 10002924 | Devices including high percentage SiGe fins formed at a tight pitch and methods of manufacturing same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2018-06-19 |
| 10002798 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2018-06-19 |
| 10002794 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2018-06-19 |
| 10002789 | High performance middle of line interconnects | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2018-06-19 |
| 9997619 | Bipolar junction transistors and methods forming same | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2018-06-12 |
| 9997590 | FinFET resistor and method to fabricate same | Praneet Adusumilli, Keith E. Fogel, Oscar van der Straten | 2018-06-12 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2018-06-12 |
| 9997453 | Antifuse having comb-like top electrode | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2018-06-12 |
| 9997407 | Voidless contact metal structures | Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki | 2018-06-12 |
| 9991382 | Vertical field effect transistor with abrupt extensions at a bottom source/drain structure | Shogo Mochizuki | 2018-06-05 |
| 9991359 | Vertical transistor gated diode | Karthik Balakrishnan | 2018-06-05 |
| 9991168 | Germanium dual-fin field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2018-06-05 |
| 9991166 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Xin Miao | 2018-06-05 |
| 9985114 | Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2018-05-29 |
| 9985024 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2018-05-29 |
| 9984871 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2018-05-29 |
| 9978775 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Ali Khakifirooz, Soon-Cheon Seo | 2018-05-22 |
| 9978748 | Method of cutting fins to create diffusion breaks for finFETs | Hemanth Jagannathan, Sivananda K. Kanakasabapathy | 2018-05-22 |
| 9972711 | Reduced resistance short-channel InGaAs planar MOSFET | Pranita Kerber, Qiqing C. Ouyang | 2018-05-15 |
| 9972684 | Compressive strain semiconductor substrates | Karthik Balakrishnan, Pouya Hashemi, Nicolas Loubet | 2018-05-15 |
| 9972620 | Preventing shorting between source and/or drain contacts and gate | Charan V. Surisetty, Dominic J. Schepis, Kangguo Cheng | 2018-05-15 |