Issued Patents All Time
Showing 26–50 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11328982 | Air gap seal for interconnect air gap and method of fabricating thereof | Youbo Lin | 2022-05-10 |
| 11302784 | Semiconductor device having contact feature and method of fabricating the same | Chang-Miao Liu, Ying-Keung Leung, Huiling Shang, Youbo Lin | 2022-04-12 |
| 11145650 | Gate cut dielectric feature and method of forming the same | Chang-Miao Liu, Huiling Shang | 2021-10-12 |
| 11133386 | Multi-layer fin structure | Bwo-Ning Chen, Chang-Miao Liu | 2021-09-28 |
| 11121236 | Semiconductor device with air spacer and stress liner | Chang-Miao Liu, Huiling Shang | 2021-09-14 |
| 11094821 | Transistor structure and method with strain effect | Youbo Lin | 2021-08-17 |
| 11081398 | Method and structure to provide integrated long channel vertical FinFet device | David Paul Brunco | 2021-08-03 |
| 10879373 | Structure and formation method of semiconductor device with metal gate stack | Chang-Miao Liu, Huiling Shang | 2020-12-29 |
| 10868174 | Devices with strained isolation features | Chang-Miao Liu, Huiling Shang | 2020-12-15 |
| 10840375 | Integrated circuits with channel-strain liner | Chang-Miao Liu, Huiling Shang | 2020-11-17 |
| 10818543 | Source/drain contact spacers and methods of forming same | — | 2020-10-27 |
| 10644156 | Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Haigou Huang | 2020-05-05 |
| 10586860 | Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process | Jiehui Shu, Laertis Economikos, John H. Zhang, Haigou Huang, Hui Zhan +4 more | 2020-03-10 |
| 10522679 | Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures | Ashish Jha, Hong Yu, Xinyuan Dou, Dongil Choi, Edmund K. Banghart +1 more | 2019-12-31 |
| 10510613 | Contact structures | Jiehui Shu, Haigou Huang, John H. Zhang, Pei Liu, Laertis Economikos | 2019-12-17 |
| 10483369 | Methods of forming replacement gate structures on transistor devices | Haigou Huang, Jinsheng Gao | 2019-11-19 |
| 10468310 | Spacer integration scheme for FNET and PFET devices | Jianwei Peng | 2019-11-05 |
| 10461155 | Epitaxial region for embedded source/drain region having uniform thickness | Yoong Hooi Yong, Yanping Shen, Hsien-Ching Lo, Joo Tat Ong, Wei Hong +6 more | 2019-10-29 |
| 10446483 | Metal-insulator-metal capacitors with enlarged contact areas | Sipeng Gu, Jianwei Peng, Yi Qi, Jeffrey Chee | 2019-10-15 |
| 10446683 | Methods, apparatus and system for forming sigma shaped source/drain lattice | Hong Yu | 2019-10-15 |
| 10439026 | Fins with single diffusion break facet improvement using epitaxial insulator | Chun Yu Wong, Hui Zang | 2019-10-08 |
| 10388562 | Composite contact etch stop layer | Haigou Huang, Daniel Jaeger, Jinsheng Gao | 2019-08-20 |
| 10347740 | Fin structures and multi-Vt scheme based on tapered fin and method to form | Min-hwa Chi, Edmund K. Banghart | 2019-07-09 |
| 10347729 | Device for improving performance through gate cut last process | Haigou Huang | 2019-07-09 |
| 10347531 | Middle of the line (MOL) contact formation method and structure | Sipeng Gu, Xinyuan Dou, Xiaobo Chen, Guoliang Zhu, Wenhe Lin +1 more | 2019-07-09 |