Issued Patents All Time
Showing 51–75 of 107 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9123568 | Encapsulation of closely spaced gate electrode structures | Richard J. Carter, Andy Wei | 2015-09-01 |
| 9034753 | Method of forming conductive contacts on a semiconductor device with embedded memory and the resulting device | Till Schloesser | 2015-05-19 |
| 9023696 | Method of forming contacts for devices with multiple stress liners | Marco Lepper, Thilo Scheiper | 2015-05-05 |
| 8987104 | Method of forming spacers that provide enhanced protection for gate electrode structures | Sven Beyer, Jan Hoentschel, Thilo Scheiper | 2015-03-24 |
| 8946821 | SRAM integrated circuits and methods for their fabrication | Matthias Goldbach | 2015-02-03 |
| 8927407 | Method of forming self-aligned contacts for a semiconductor device | Andy Wei, Erik Geiss, Martin Mazur | 2015-01-06 |
| 8921904 | Replacement gate fabrication methods | Matthias Goldbach | 2014-12-30 |
| 8916433 | Superior integrity of high-k metal gate stacks by capping STI regions | Thilo Scheiper, Sven Beyer | 2014-12-23 |
| 8883586 | Mol insitu Pt rework sequence | Marco Lepper, Uwe Kahler, Vivien Schroeder | 2014-11-11 |
| 8859356 | Method of forming metal silicide regions on a semiconductor device | Hans-Juergen Thees | 2014-10-14 |
| 8853810 | Integrated circuits that include deep trench capacitors and methods for their fabrication | Till Schloesser | 2014-10-07 |
| 8846513 | Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill | Richard J. Carter, Rolf Stephan | 2014-09-30 |
| 8835245 | Semiconductor device comprising self-aligned contact elements | Till Schloesser, Frank Jakubowski, Andy Wei, Richard J. Carter, Matthias Schaller | 2014-09-16 |
| 8790975 | Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features | Till Schloesser, Vivien Schroeder | 2014-07-29 |
| 8765586 | Methods of forming metal silicide regions on semiconductor devices | Clemens Fitz, Markus Lenski | 2014-07-01 |
| 8742510 | Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween | Andy Wei, Richard J. Carter | 2014-06-03 |
| 8735232 | Methods for forming semiconductor devices | Matthias Goldbach | 2014-05-27 |
| 8722523 | Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure | Till Schloesser, Frank Jakubowski | 2014-05-13 |
| 8716126 | Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions | Thomas Werner, Frank Feustel | 2014-05-06 |
| 8716077 | Replacement gate compatible eDRAM transistor with recessed channel | Till Schloesser, Frank Jakubowski | 2014-05-06 |
| 8697557 | Method of removing gate cap materials while protecting active area | Till Schloesser, Frank Jakubowski | 2014-04-15 |
| 8673696 | SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage | Frank Jakubowski, Jens Heinrich, Marco Lepper, Jana Schlott, Kai Frohberg | 2014-03-18 |
| 8652889 | Fin-transistor formed on a patterned STI region by late fin etch | Andy Wei, Richard J. Carter, Frank Ludwig | 2014-02-18 |
| 8647938 | SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication | Matthias Goldbach | 2014-02-11 |
| 8647952 | Encapsulation of closely spaced gate electrode structures | Richard J. Carter, Andy Wei | 2014-02-11 |