Issued Patents All Time
Showing 26–50 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10109526 | Etch profile control during skip via formation | Xunyuan Zhang, J. Jay McMahon, Ryan Smith, Errol Todd Ryan, Shao Beng Law | 2018-10-23 |
| 10083858 | Interconnection lines having variable widths and partially self-aligned continuity cuts | Guillaume Bouche | 2018-09-25 |
| 10043703 | Apparatus and method for forming interconnection lines having variable pitch and variable widths | Guillaume Bouche | 2018-08-07 |
| 10008408 | Devices and methods of forming asymmetric line/space with barrierless metallization | Errol Todd Ryan | 2018-06-26 |
| 10002786 | Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts | Guillaume Bouche | 2018-06-19 |
| 9887127 | Interconnection lines having variable widths and partially self-aligned continuity cuts | Guillaume Bouche | 2018-02-06 |
| 9812351 | Interconnection cells having variable width metal lines and fully-self aligned continuity cuts | Guillaume Bouche, Lars Liebmann | 2017-11-07 |
| 9691775 | Combined SADP fins for semiconductor devices and methods of making the same | Eric S. Kozarsky, Guillaume Bouche | 2017-06-27 |
| 9570394 | Formation of IC structure with pair of unitary metal fins | Xunyuan Zhang, Errol Todd Ryan | 2017-02-14 |
| 9570344 | Method to protect MOL metallization from hardmask strip process | Vimal Kamineni, Shariq Siddiqui, Jeremy A. Wahl | 2017-02-14 |
| 9553194 | Method for improved fin profile | Zhenyu Hu, Hong Yu, Jinping Liu | 2017-01-24 |
| 9530654 | FINFET fin height control | — | 2016-12-27 |
| 9508712 | Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation | Jeremy A. Wahl | 2016-11-29 |
| 9318388 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Vimal Kamineni, Abner Bello, Wenhui Wang, Michael Wedlake +1 more | 2016-04-19 |
| 9093302 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Vimal Kamineni, Abner Bello, Wenhui Wang, Michael Wedlake +1 more | 2015-07-28 |
| 9054052 | Methods for integration of pore stuffing material | Errol Todd Ryan, Ming He, Moosung Chae, Kunaljeet Tanwar, Larry Zhao +4 more | 2015-06-09 |
| 8932934 | Methods of self-forming barrier integration with pore stuffed ULK material | Moosung Chae, Errol Todd Ryan, Christian Witt, Ailian Zhao, Ming He +3 more | 2015-01-13 |
| 8889549 | Methods of forming conductive structures using a sacrificial liner layer | Xunyuan Zhang, Errol Todd Ryan | 2014-11-18 |
| 8846491 | Forming a diffusion break during a RMG process | Daniel T. Pham, Zhenyu Hu, Andy Wei | 2014-09-30 |
| 8846511 | Methods of trimming nanowire structures | Jeremy A. Wahl | 2014-09-30 |
| 8815685 | Methods for fabricating integrated circuits having confined epitaxial growth regions | Jody A. Fronheiser, Errol Todd Ryan | 2014-08-26 |
| 8691640 | Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material | Jeremy A. Wahl | 2014-04-08 |
| 8673718 | Methods of forming FinFET devices with alternative channel materials | Witold P. Maszara, Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Kerem Akarvardar | 2014-03-18 |
| 8669186 | Methods of forming SRAM devices using sidewall image transfer techniques | — | 2014-03-11 |
| 8580642 | Methods of forming FinFET devices with alternative channel materials | Witold P. Maszara, Ajey Poovannummoottil Jacob, Jody A. Fronheiser, Kerem Akarvardar | 2013-11-12 |