Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8450206 | Method of forming a semiconductor device including a stress buffer material formed above a low-k metallization system | Axel Walter | 2013-05-28 |
| 8404577 | Semiconductor device having a grain orientation layer | Juergen Boemmels, Ralf Richter | 2013-03-26 |
| 8392573 | Transport of customer flexibility changes in a multi-tenant environment | Stefan Baeuerle, Karsten Fanghaenel, Bernhard Thimmel, Uwe Schlarb, Olaf Meincke +2 more | 2013-03-05 |
| 8329577 | Method of forming an alloy in an interconnect structure to increase electromigration resistance | Moritz Andreas Meyer, Eckhard Langer | 2012-12-11 |
| 8283247 | Semiconductor device including a die region designed for aluminum-free solder bump connection and a test structure designed for aluminum-free wire bonding | Frank Kuechenmeister, Steffi Thierbach | 2012-10-09 |
| 8216880 | Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protection layer | Frank Kuechenmeister | 2012-07-10 |
| 8114688 | Method and semiconductor structure for monitoring etch characteristics during fabrication of vias of interconnect structures | — | 2012-02-14 |
| 8062982 | High yield plasma etch process for interlayer dielectrics | Daniel Fischer, Matthias Schaller, Kornelia Dittmar | 2011-11-22 |
| 8058731 | Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance | Moritz Andreas Meyer, Eckhard Langer | 2011-11-15 |
| 8053354 | Reduced wafer warpage in semiconductors by stress engineering in the metallization system | Frank Koschinsky, Joerg Hohage | 2011-11-08 |
| 8043956 | Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer | Frank Kuechenmeister | 2011-10-25 |
| 8039400 | Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition | Frank Koschinsky, Holger Schuehrer | 2011-10-18 |
| 8039958 | Semiconductor device including a reduced stress configuration for metal pillars | Alexander Platz, Frank Kuechenmeister | 2011-10-18 |
| 7982313 | Semiconductor device including stress relaxation gaps for enhancing chip package interaction stability | Michael Grillberger | 2011-07-19 |
| 7867917 | Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity | Joerg Hohage, Volker Kahlert | 2011-01-11 |
| 7838359 | Technique for forming contact insulation layers and silicide regions with different characteristics | Christoph Schwan, Kai Frohberg | 2010-11-23 |
| 7829889 | Method and semiconductor structure for monitoring etch characteristics during fabrication of vias of interconnect structures | — | 2010-11-09 |
| 7829357 | Method and test structure for monitoring CMP processes in metallization layers of semiconductor devices | Michael Grillberger | 2010-11-09 |
| 7713815 | Semiconductor device including a vertical decoupling capacitor | Kai Frohberg, Christoph Schwan | 2010-05-11 |
| 7678699 | Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction | Joerg Hohage, Volker Kahlert | 2010-03-16 |
| 7608633 | Heteroaryl-substituted acetone derivatives as inhibitors of phospholipase A2 | Joachim Ludwig | 2009-10-27 |
| 7592258 | Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the same | Matthias Schaller, Carsten Peters | 2009-09-22 |
| 7569937 | Technique for forming a copper-based contact layer without a terminal metal | Frank Kuechenmeister, Gotthard Jungnickel | 2009-08-04 |
| 7550396 | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device | Kai Frohberg, Volker Grimm, Sven Mueller, Ralf Richter, Jochen Klais +4 more | 2009-06-23 |
| 7491555 | Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device | Kai Frohberg, Holger Schuehrer | 2009-02-17 |