Issued Patents All Time
Showing 76–100 of 138 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6528412 | Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect opening | Pin-Chin Connie Wang | 2003-03-04 |
| 6528409 | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration | Fei Wang, Diana M. Schonauer, Steven C. Avanzino | 2003-03-04 |
| 6518648 | Superconductor barrier layer for integrated circuit interconnects | — | 2003-02-11 |
| 6515368 | Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper | Alexander H. Nickel | 2003-02-04 |
| 6509262 | Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution | — | 2003-01-21 |
| 6504251 | Heat/cold amorphized barrier layer for integrated circuit interconnects | Minh Quoc Tran, Minh Van Ngo | 2003-01-07 |
| 6501177 | Atomic layer barrier layer for integrated circuit interconnects | Minh Van Ngo, Minh Quoc Tran | 2002-12-31 |
| 6500743 | Method of copper-polysilicon T-gate formation | Steven C. Avanzino, Matthew S. Buynoski | 2002-12-31 |
| 6498093 | Formation without vacuum break of sacrificial layer that dissolves in acidic activation solution within interconnect | Krishnashree Achuthan | 2002-12-24 |
| 6495443 | Method of re-working copper damascene wafers | Richard J. Huang | 2002-12-17 |
| 6489683 | Variable grain size in conductors for semiconductor vias and trenches | John A. Iacoponi | 2002-12-03 |
| 6486560 | Semiconductor device fabricated by a method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution | — | 2002-11-26 |
| 6482656 | Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit | — | 2002-11-19 |
| 6479902 | Semiconductor catalytic layer and atomic layer deposition thereof | Carl Galewski | 2002-11-12 |
| 6475272 | Chemical solution for Cu-Ca-O thin film formations on Cu surfaces | — | 2002-11-05 |
| 6472310 | Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure | Krishnashree Achuthan | 2002-10-29 |
| 6469387 | Semiconductor device formed by calcium doping a copper surface using a chemical solution | Joffre F. Bernard, Paul L. King | 2002-10-22 |
| 6465867 | Amorphous and gradated barrier layer for integrated circuit interconnects | Joffre F. Bernard | 2002-10-15 |
| 6455425 | Selective deposition process for passivating top interface of damascene-type Cu interconnect lines | Paul R. Besser, Darrell M. Erb | 2002-09-24 |
| 6455415 | Method of encapsulated copper (Cu) interconnect formation | Robin Cheung | 2002-09-24 |
| 6447933 | Formation of alloy material using alternating depositions of alloy doping element and bulk material | Pin-Chin Connie Wang | 2002-09-10 |
| 6444580 | Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed | Paul L. King, Joffre F. Bernard | 2002-09-03 |
| 6440830 | Method of copper-polysilicon gate formation | — | 2002-08-27 |
| 6433379 | Tantalum anodization for in-laid copper metallization capacitor | Steven C. Avanzino, Qi Xiang, Matthew S. Buynoski | 2002-08-13 |
| 6426293 | Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopant | Pin-Chin Connie Wang, Amit P. Marathe | 2002-07-30 |