SH

Sameer Haddad

AM AMD: 80 patents #49 of 9,279Top 1%
SL Spansion Llc.: 23 patents #19 of 769Top 3%
Cypress Semiconductor: 13 patents #135 of 1,852Top 8%
Fujitsu Limited: 3 patents #8,614 of 24,456Top 40%
ON onsemi: 1 patents #1,116 of 1,901Top 60%
📍 San Jose, CA: #178 of 32,062 inventorsTop 1%
🗺 California: #1,614 of 386,348 inventorsTop 1%
Overall (All Time): #10,350 of 4,157,543Top 1%
118
Patents All Time

Issued Patents All Time

Showing 76–100 of 118 patents

Patent #TitleCo-InventorsDate
6400608 Accurate verify apparatus and method for NOR flash memory cells in the presence of high column leakage Richard Fastow, Lee Cleveland 2002-06-04
6337246 Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing Daniel Sobek, Timothy Thurgate, Carl Robert Huster, Tuan Pham, Mark T. Ramsbey 2002-01-08
6294430 Nitridization of the pre-ddi screen oxide Richard Fastow, Daniel Sobek 2001-09-25
6275415 Multiple byte channel hot electron programming using ramped gate and source bias voltage Ravi Sunkavalli, Wing Leung, John Chen, Ravi Prakash Gutala, Colin S. Bill +1 more 2001-08-14
6268624 Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing Daniel Sobek, Timothy Thurgate, Carl Robert Huster, Tuan Pham, Mark T. Ramsbey 2001-07-31
6269023 Method of programming a non-volatile memory cell using a current limiter Narbeh Derhacobian, Janet Wang, Daniel Sobek 2001-07-31
6266275 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memory Paul L. Chen, Mike Van Buskirk, Shane Hollmer, Binh Quang Le, Shoichi Kawamura +3 more 2001-07-24
6252803 Automatic program disturb with intelligent soft programming for flash cells Richard Fastow, Lee Cleveland, Chi Chang 2001-06-26
6252276 Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide Mark T. Ramsbey, Vei-Han Chan, Yu Sun, Chi Chang 2001-06-26
6248627 Method for protecting gate edges from charge gain/loss in semiconductor device Tuan Pham, Mark T. Ramsbey, Angela T. Hui, Yu Sun, Chi Chang 2001-06-19
6240016 Method to reduce read gate disturb for flash EEPROM application Lee Cleveland 2001-05-29
6236596 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices Daniel Sobek, Timothy Thurgate, Scott Luning, Vei-Han Chan 2001-05-22
6188609 Ramped or stepped gate channel erase for flash memory application Ravi Sunkavalli 2001-02-13
6172914 Concurrent erase verify scheme for flash memory applications Colin S. Bill, Michael A. Van Buskirk 2001-01-09
6172909 Ramped gate technique for soft programming to tighten the Vt distribution Janet Wang 2001-01-09
6157572 Method for erasing flash electrically erasable programmable read-only memory (EEPROM) Wing Leung, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more 2000-12-05
6122198 Bit by bit APDE verify for flash memory applications Ravi Prakash Gutala, Colin S. Bill 2000-09-19
6046932 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM Colin S. Bill, Jonathan Su, Vei-Han Chan 2000-04-04
6043122 Three-dimensional non-volatile memory Yowjuang W. Liu 2000-03-28
6025240 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices Vei-Han Chan, Scott Luning, Mark Randolph, Nicholas H. Tripsas, Daniel Sobek +2 more 2000-02-15
6001713 Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device Mark T. Ramsbey, Vei-Han Chan, Chi Chang, Yu Sun, Raymond Yu 1999-12-14
5999452 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memory Pau-Ling Chen, Mike Van Buskirk, Shane Hollmer, Binh Quang Le, Shoichi Kawamura +3 more 1999-12-07
5978272 Nonvolatile memory structure for programmable logic devices Hao Fang, Nader Radjy 1999-11-02
5972751 Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device Mark T. Ramsbey, Vei-Han Chan, Yu Sun, Chi Chang 1999-10-26
5945705 Three-dimensional non-volatile memory Yowjuang W. Liu 1999-08-31