| 7561471 |
Cycling improvement using higher erase bias |
Sheung-Hee Park, Xuguang Wang, Ming Sang Kwan, Yi He, Edward Franklin Runnion |
2009-07-14 |
| 7385851 |
Repetitive erase verify technique for flash memory devices |
Sheung-Hee Park, Ming Sang Kwan |
2008-06-10 |
| 7319615 |
Ramp gate erase for dual bit flash memory |
Sheung-Hee Park, Gwyn Robert Jones, Edward Franklin Runnion, Ming Sang Kwan, Xuguang Wang +1 more |
2008-01-15 |
| 7283398 |
Method for minimizing false detection of states in flash memory devices |
Yue-Song He, Richard Fastow, Takao Akaogi, Zhigang Wang |
2007-10-16 |
| 7020021 |
Ramped soft programming for control of erase voltage distributions in flash memory devices |
Richard Fastow, Yue-Song He, Sheung-Hee Park |
2006-03-28 |
| 6937518 |
Programming of a flash memory cell |
Sheung-Hee Park, Richard Fastow |
2005-08-30 |
| 6819615 |
Memory device having resistive element coupled to reference cell for improved reliability |
Richard Fastow, John Wang |
2004-11-16 |
| 6781885 |
Method of programming a memory cell |
Sheung-Hee Park, Richard Fastow |
2004-08-24 |
| 6285599 |
Decoded source lines to tighten erase Vt distribution |
Hisayuki Shimada |
2001-09-04 |
| 6275415 |
Multiple byte channel hot electron programming using ramped gate and source bias voltage |
Sameer Haddad, Ravi Sunkavalli, John Chen, Ravi Prakash Gutala, Colin S. Bill +1 more |
2001-08-14 |
| 6157572 |
Method for erasing flash electrically erasable programmable read-only memory (EEPROM) |
Sameer Haddad, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more |
2000-12-05 |
| 5901090 |
Method for erasing flash electrically erasable programmable read-only memory (EEPROM) |
Sameer Haddad, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more |
1999-05-04 |
| 5875130 |
Method for programming flash electrically erasable programmable read-only memory |
Sameer Haddad, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more |
1999-02-23 |