Issued Patents All Time
Showing 101–118 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5912489 | Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory | Pau-Ling Chen, Mike Van Buskirk, Shane Hollmer, Binh Quang Le, Shoichi Kawamura +3 more | 1999-06-15 |
| 5901090 | Method for erasing flash electrically erasable programmable read-only memory (EEPROM) | Wing Leung, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more | 1999-05-04 |
| 5875130 | Method for programming flash electrically erasable programmable read-only memory | Wing Leung, John Chen, Ravi Sunkavalli, Ravi Prakash Gutala, Jonathan S. Su +2 more | 1999-02-23 |
| 5856946 | Memory cell programming with controlled current injection | Vei-Han Chan, Chi Chang | 1999-01-05 |
| 5815438 | Optimized biasing scheme for NAND read and hot-carrier write operations | Pau-Ling Chen | 1998-09-29 |
| 5805499 | Channel hot-carrier page write for NAND applications | — | 1998-09-08 |
| 5793677 | Using floating gate devices as select gate devices for NAND flash memory and its bias scheme | Chung-You Hu, Yu Sun, Chi Chang | 1998-08-11 |
| 5790456 | Multiple bits-per-cell flash EEPROM memory cells with wide program and erase V.sub.t window | — | 1998-08-04 |
| 5712815 | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells | Colin S. Bill | 1998-01-27 |
| 5708588 | Flash EEPROM memory with improved discharged speed using substrate bias and method therefor | Hao Fang | 1998-01-13 |
| 5617357 | Flash EEPROM memory with improved discharge speed using substrate bias and method therefor | Hao Fang | 1997-04-01 |
| 5596531 | Method for decreasing the discharge time of a flash EPROM cell | David Kuan-Yu Liu, Ming Sang Kwan, Chi Chang, Yuan Tang | 1997-01-21 |
| 5590076 | Channel hot-carrier page write | Chi Chang, David Kuan-Yu Liu | 1996-12-31 |
| 5491657 | Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells | Hao Fang | 1996-02-13 |
| 5457336 | Non-volatile memory structure including protection and structure for maintaining threshold stability | Hao Fang, Chi Chang | 1995-10-10 |
| 5335198 | Flash EEPROM array with high endurance | Michael A. Van Buskirk, Kevin W. Plouse, Joseph G. Pawletko, Chi Chang, Ravi Prakash Gutala | 1994-08-02 |
| 5077691 | Flash EEPROM array with negative gate voltage erase operation | Chi Chang, Antonio Matalvo, Michael A. Van Buskirk | 1991-12-31 |
| 4774197 | Method of improving silicon dioxide | Mong-Song Liang | 1988-09-27 |