| 6545912 |
Erase verify mode to evaluate negative Vt's |
Shane Hollmer, Pau-Ling Chen |
2003-04-08 |
| 6525966 |
Method and apparatus for adjusting on-chip current reference for EEPROM sensing |
Shane Hollmer, Binh Quang Le |
2003-02-25 |
| 6327183 |
Nonlinear stepped programming voltage |
K. Michael Han, Narbeh Derhacobian |
2001-12-04 |
| 6304487 |
Register driven means to control programming voltages |
Binh Quang Le, Pau-Ling Chen, James Hong |
2001-10-16 |
| 6295228 |
System for programming memory cells |
Binh Quang Le, Pau-Ling Chen, James Hong |
2001-09-25 |
| 6246611 |
System for erasing a memory cell |
Binh Quang Le, James Hong, Pau-Ling Chen |
2001-06-12 |
| 6246610 |
Symmetrical program and erase scheme to improve erase time degradation in NAND devices |
K. Michael Han, Narbeh Derhacobian, Chi Chang |
2001-06-12 |
| 6185130 |
Programmable current source |
Shane Hollmer |
2001-02-06 |
| 6181605 |
Global erase/program verification apparatus and method |
Shane Hollmer, Michael Chung |
2001-01-30 |
| 6141244 |
Multi level sensing of NAND memory cells by external bias current |
Pau-Ling Chen, Shane Hollmer |
2000-10-31 |
| 5335198 |
Flash EEPROM array with high endurance |
Michael A. Van Buskirk, Kevin W. Plouse, Chi Chang, Sameer Haddad, Ravi Prakash Gutala |
1994-08-02 |