Issued Patents All Time
Showing 26–50 of 205 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7952423 | Process/design methodology to enable high performance logic and analog circuits using a single process | Albert Ratnakumar, Jeffrey Tung, Weiqi Ding | 2011-05-31 |
| 7923785 | Field effect transistor having increased carrier mobility | Boon Yong Ang, Jung-Suk Goo | 2011-04-12 |
| 7732336 | Shallow trench isolation process and structure with minimized strained silicon consumption | James Pan, Jung-Suk Goo | 2010-06-08 |
| 7713834 | Method of forming isolation regions for integrated circuits | Haihong Wang, Minh Van Ngo, Paul R. Besser, Eric N. Paton, Ming-Ren Lin | 2010-05-11 |
| 7648886 | Shallow trench isolation process | Minh Van Ngo, Paul R. Besser, Eric N. Paton, Ming-Ren Lin | 2010-01-19 |
| 7482252 | Method for reducing floating body effects in SOI semiconductor device without degrading mobility | David Wu, James F. Buller | 2009-01-27 |
| 7462549 | Shallow trench isolation process and structure with minimized strained silicon consumption | James Pan, Jung-Suk Goo | 2008-12-09 |
| 7422961 | Method of forming isolation regions for integrated circuits | Haihong Wang, Minh Van Ngo, Paul R. Besser, Eric N. Paton, Ming-Ren Lin | 2008-09-09 |
| 7417250 | Strained-silicon device with different silicon thicknesses | James F. Buller, Derick J. Wristers, Bin Yu | 2008-08-26 |
| 7351638 | Scanning laser thermal annealing | Cyrus E. Tabery, Eric N. Paton, Bin Yu, Robert B. Ogle | 2008-04-01 |
| 7312125 | Fully depleted strained semiconductor on insulator transistor and method of making the same | Paul R. Besser, Minh Van Ngo, Eric N. Paton, Haihong Wang | 2007-12-25 |
| 7306997 | Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor | Niraj Subba, Witold P. Maszara, Zoran Krivokapic, Ming-Ren Lin | 2007-12-11 |
| 7238588 | Silicon buffered shallow trench isolation | — | 2007-07-03 |
| 7221025 | Semiconductor on insulator substrate and devices formed therefrom | — | 2007-05-22 |
| 7217608 | CMOS with strained silicon channel NMOS and silicon germanium channel PMOS | — | 2007-05-15 |
| 7211489 | Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal | Robert B. Ogle, Eric N. Paton, Cyrus E. Tabery, Bin Yu | 2007-05-01 |
| 7176531 | CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric | Huicai Zhong, Jung-Suk Goo, Allison Holbrook, Joong S. Jeon, George Jonathan Kluth | 2007-02-13 |
| 7170084 | Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication | Jung-Suk Goo, Haihong Wang | 2007-01-30 |
| 7138302 | Method of fabricating an integrated circuit channel region | James Pan, Jung-Suk Goo | 2006-11-21 |
| 7105421 | Silicon on insulator field effect transistor with heterojunction gate | Matthew S. Buynoski | 2006-09-12 |
| 7091097 | End-of-range defect minimization in semiconductor device | Eric N. Paton, Cyrus E. Tabery, Bin Yu, Robert B. Ogle | 2006-08-15 |
| 7078299 | Formation of finFET using a sidewall epitaxial layer | Witold P. Maszara, Jung-Suk Goo, James Pan | 2006-07-18 |
| 7071051 | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure | Joong S. Jeon, Robert Clark-Phelps, Huicai Zhong | 2006-07-04 |
| 7071065 | Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication | Eric N. Paton, Haihong Wang | 2006-07-04 |
| 7033893 | CMOS devices with balanced drive currents based on SiGe | — | 2006-04-25 |