Issued Patents All Time
Showing 426–450 of 608 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5959337 | Air gap spacer formation for high performance MOSFETs | Daniel Kadosh, Michael Duane | 1999-09-28 |
| 5959333 | Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor | H. Jim Fulford, Derick J. Wristers | 1999-09-28 |
| 5955785 | Copper-containing plug for connection of semiconductor surface with overlying conductor | Fred N. Hause | 1999-09-21 |
| 5953613 | High performance MOSFET with a source removed from the semiconductor substrate and fabrication method thereof | Frederick N. Hause | 1999-09-14 |
| 5952696 | Complementary metal oxide semiconductor device with selective doping | Daniel Kadosh | 1999-09-14 |
| 5952702 | High performance MOSFET structure having asymmetrical spacer formation and having source and drain regions with different doping concentration | Fred N. Hause | 1999-09-14 |
| 5950091 | Method of making a polysilicon gate conductor of an integrated circuit formed as a sidewall spacer on a sacrificial material | H. Jim Fulford, Derick J. Wristers | 1999-09-07 |
| 5950097 | Advanced isolation scheme for deep submicron technology | Kuang-Yeh Chang, Yowjuang W. Liu, Frederick N. Hause | 1999-09-07 |
| 5949092 | Ultra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulator | Daniel Kadosh, Michael Duane | 1999-09-07 |
| 5950082 | Transistor formation for multilevel transistors | — | 1999-09-07 |
| 5946579 | Stacked mask integration technique for advanced CMOS transistor formation | H. Jim Fulford, Fred N. Hause | 1999-08-31 |
| 5946581 | Method of manufacturing a semiconductor device by doping an active region after formation of a relatively thick oxide layer | Thomas E. Spikes, Jr., Robert Paiz | 1999-08-31 |
| 5943585 | Trench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogen | Charles E. May, H. Jim Fulford | 1999-08-24 |
| 5943596 | Fabrication of a gate electrode stack using a patterned oxide layer | Mark C. Gilmer | 1999-08-24 |
| 5942787 | Small gate electrode MOSFET | Robert Paiz, Thomas E. Spikes, Jr. | 1999-08-24 |
| 5943562 | Semiconductor fabrication employing a transistor gate coupled to a localized substrate | Daniel Kadosh, Michael Duane | 1999-08-24 |
| 5940707 | Vertically integrated advanced transistor formation | Michael Duane | 1999-08-17 |
| 5940698 | Method of making a semiconductor device having high performance gate electrode structure | Mark C. Gilmer | 1999-08-17 |
| 5937302 | Method of forming lightly doped drain region and heavily doping a gate using a single implant step | Frederick N. Hause | 1999-08-10 |
| 5937303 | High dielectric constant gate dielectric integrated with nitrogenated gate electrode | H. Jim Fulford | 1999-08-10 |
| 5937308 | Semiconductor trench isolation structure formed substantially within a single chamber | Mark C. Gilmer | 1999-08-10 |
| 5937310 | Reduced bird's beak field oxidation process using nitrogen implanted into active region | Fred N. Hause, Kuang-Yeh Chang | 1999-08-10 |
| 5936287 | Nitrogenated gate structure for improved transistor performance and method for making same | H. Jim Fulford | 1999-08-10 |
| 5937299 | Method for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewalls | Mark W. Michael, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Bradley T. Moore +1 more | 1999-08-10 |
| 5937301 | Method of making a semiconductor device having sidewall spacers with improved profiles | Daniel Kadosh | 1999-08-10 |