| 11195919 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer |
Stephen M. Cea, Roza Kotlyar, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2021-12-07 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Cheng-Ying Huang +3 more |
2021-11-16 |
| 11164974 |
Channel layer formed in an art trench |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nancy Zelick, Nicholas G. Minutillo +1 more |
2021-11-02 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz +3 more |
2021-11-02 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2021-08-24 |
| 11049773 |
Art trench spacers to enable fin release for non-lattice matched channels |
Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more |
2021-06-29 |
| 11024713 |
Gradient doping to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Ashish Agrawal, Benjamin Chu-Kung +3 more |
2021-06-01 |
| 10985263 |
Thin film cap to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more |
2021-04-20 |
| 10957769 |
High-mobility field effect transistors with wide bandgap fin cladding |
Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Matthew V. Metz +3 more |
2021-03-23 |
| 10937665 |
Methods and apparatus for gettering impurities in semiconductors |
Aaron D. Lilak, Patrick Morrow, Rishabh Mehandru, Stephen M. Cea |
2021-03-02 |
| 10892335 |
Device isolation by fixed charge |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more |
2021-01-12 |
| 10886408 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer |
Chandra S. Mohapatra, Glenn A. Glass, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more |
2021-01-05 |