Issued Patents 2020
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833146 | Horizontal-trench capacitor | Zheng Xu, Zhenxing Bi, Dongbing Shao | 2020-11-10 |
| 10832975 | Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement | Brent A. Anderson, Junli Wang, Kangguo Cheng, Choonghyun Lee, Hemanth Jagannathan | 2020-11-10 |
| 10804368 | Semiconductor device having two-part spacer | Junli Wang, Dechao Guo, Heng Wu, Ernest Y. Wu | 2020-10-13 |
| 10797163 | Leakage control for gate-all-around field-effect transistor devices | Lan Yu, Heng Wu, Junli Wang, Dechao Guo | 2020-10-06 |
| 10790199 | Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering | Hemanth Jagannathan, Choonghyun Lee, Richard Southwick | 2020-09-29 |
| 10790271 | Perpendicular stacked field-effect transistor device | Zheng Xu, Chen Zhang, Dongbing Shao | 2020-09-29 |
| 10777659 | Self-aligned bottom source/drain epitaxial growth in vertical field effect transistors | Choonghyun Lee, Shogo Mochizuki, Brent A. Anderson, Hemanth Jagannathan | 2020-09-15 |
| 10777469 | Self-aligned top spacers for vertical FETs with in situ solid state doping | Junli Wang, Brent A. Anderson, Xin Miao | 2020-09-15 |
| 10756194 | Shared metal gate stack with tunable work function | Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan | 2020-08-25 |
| 10749012 | Formation of self-aligned bottom spacer for vertical transistors | Hemanth Jagannathan, Choonghyun Lee, Shogo Mochizuki | 2020-08-18 |
| 10741663 | Encapsulation layer for vertical transport field-effect transistor gate stack | Hemanth Jagannathan, Michael P. Belyansky | 2020-08-11 |
| 10741401 | Self-aligned semiconductor gate cut | Peng Xu, Kangguo Cheng | 2020-08-11 |
| 10692873 | Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions | Takashi Ando, Pouya Hashemi, Choonghyun Lee | 2020-06-23 |
| 10692990 | Gate cut in RMG | Siva Kanakasabapathy, Andrew M. Greene | 2020-06-23 |
| 10692778 | Gate-all-around FETs having uniform threshold voltage | Dechao Guo, Junli Wang, Heng Wu | 2020-06-23 |
| 10679993 | Vertical fin field effect transistor devices with a replacement metal gate | Junli Wang, Michael P. Belyansky | 2020-06-09 |
| 10680083 | Oxide isolated fin-type field-effect transistors | Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee | 2020-06-09 |
| 10679901 | Differing device characteristics on a single wafer by selective etch | Huimei Zhou, Shogo Mochizuki, Gen Tsutsui | 2020-06-09 |
| 10672670 | Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages | Hemanth Jagannathan, Brent A. Anderson, Choonghyun Lee | 2020-06-02 |
| 10672905 | Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts | Brent A. Anderson, Choonghyun Lee, Hemanth Jagannathan | 2020-06-02 |
| 10672910 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Huimei Zhou, Michael P. Belyansky, Andrew M. Greene, Gen Tsutsui | 2020-06-02 |
| 10658973 | Reconfigurable allocation of VNCAP inter-layer vias for co-tuning of L and C in LC tank | Zheng Xu, Hung H. Tran, Qianwen Chen | 2020-05-19 |
| 10658521 | Enabling residue free gap fill between nanosheets | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Muthumanickam Sankarapandian, Nelson Felix | 2020-05-19 |
| 10658299 | Replacement metal gate processes for vertical transport field-effect transistor | Choonghyun Lee, Chun Wing Yeung, Hemanth Jagannathan | 2020-05-19 |
| 10644129 | Gate cut in RMG | Siva Kanakasabapathy, Andrew M. Greene | 2020-05-05 |