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High temperature ultra-fast annealed soft mask for semiconductor devices |
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Damage free hardmask strip |
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Semiconductor device with multiple threshold voltages |
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Enabling residue free gap fill between nanosheets |
Ekmini Anuja De Silva, Jing Guo, Ruqiang Bao, Muthumanickam Sankarapandian, Nelson Felix |
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Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer |
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Low undercut N-P work function metal patterning in nanosheet replacement metal gate process |
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2020-04-21 |
