Issued Patents 2020
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10692925 | Dielectric fill for memory pillar elements | Theodorus E. Standaert, Isabel Cristina Chu, Chih-Chao Yang, Son V. Nguyen | 2020-06-23 |
| 10680169 | Multilayer hardmask for high performance MRAM devices | Daniel C. Edelstein, Theodorus E. Standaert, Kisup Chung, Isabel Cristina Chu, John C. Arnold | 2020-06-09 |
| 10679934 | Capacitance reduction in sea of lines BEOL metallization | Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Hosadurga Shobha | 2020-06-09 |
| 10672611 | Hardmask stress, grain, and structure engineering for advanced memory applications | Ashim Dutta, Oscar van der Straten, Chih-Chao Yang | 2020-06-02 |
| 10672984 | Resistive memory crossbar array compatible with Cu metallization | Takashi Ando, Lawrence A. Clevenger, Shyng-Tsong Chen | 2020-06-02 |
| 10658589 | Alignment through topography on intermediate component for memory device patterning | Hao Tang, Injo Ok, Theodorus E. Standaert | 2020-05-19 |
| 10651078 | Selective ILD deposition for fully aligned via with airgap | Christopher J. Penny, Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Hosadurga Shobha | 2020-05-12 |
| 10629529 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny | 2020-04-21 |
| 10629478 | Dual-damascene formation with dielectric spacer and thin liner | Benjamin D. Briggs, Lawrence A. Clevenger, Huai Huang, Christopher J. Penny, Hosadurga Shobha | 2020-04-21 |
| 10622406 | Dual metal nitride landing pad for MRAM devices | Alexander Reznicek, Oscar van der Straten | 2020-04-14 |
| 10615119 | Back end of line electrical fuse structure and method of fabrication | Benjamin D. Briggs, Lawrence A. Clevenger, Chih-Chao Yang | 2020-04-07 |
| 10606231 | Computer-mediated reality including physical damping feedback | Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Aldis Sipolins | 2020-03-31 |
| 10593506 | Fold over emitter and collector field emission transistor | Benjamin D. Briggs, Lawrence A. Clevenger | 2020-03-17 |
| 10586767 | Hybrid BEOL metallization utilizing selective reflection mask | Benjamin D. Briggs, Cornelius Brown Peethala, Koichi Motoyama, Gen Tsutsui, Ruqiang Bao +2 more | 2020-03-10 |
| 10585998 | Automated method for integrated analysis of back end of the line yield, line resistance/capacitance and process performance | Prasad Bhosale, Chih-Chao Yang | 2020-03-10 |
| 10580740 | Low-temperature diffusion doping of copper interconnects independent of seed layer composition | Benjamin D. Briggs, Lawrence A. Clevenger, Chao-Kun Hu, Takeshi Nogami, Deepika Priyadarshini | 2020-03-03 |
| 10559498 | Location-specific laser annealing to improve interconnect microstructure | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo | 2020-02-11 |
| 10545806 | Proximity correction in three-dimensional manufacturing | Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Aldis Sipolins | 2020-01-28 |
| 10546892 | Resistive memory device with meshed electrodes | Takashi Ando, Lawrence A. Clevenger, Chih-Chao Yang | 2020-01-28 |
| 10541206 | Interconnect structure including air gaps enclosed between conductive lines and a permeable dielectric layer | Benjamin D. Briggs, Lawrence A. Clevenger, Christopher J. Penny | 2020-01-21 |
| 10529621 | Modulating the microstructure of metallic interconnect structures | Roger A. Quon, Chih-Chao Yang | 2020-01-07 |
| 10529662 | Method and structure to construct cylindrical interconnects to reduce resistance | Benjamin D. Briggs, Christopher J. Penny, Huai Huang, Lawrence A. Clevenger, Hosadurga Shobha | 2020-01-07 |