Issued Patents 2019
Showing 126–150 of 354 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10367069 | Fabrication of vertical field effect transistor structure with controlled gate length | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-07-30 |
| 10367076 | Air gap spacer with controlled air gap height | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-30 |
| 10365379 | Colorimetric radiation dosimetry | Qing Cao, Zhengwen Li, Fei Liu | 2019-07-30 |
| 10366881 | Porous fin as compliant medium to form dislocation-free heteroepitaxial films | Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana | 2019-07-30 |
| 10366930 | Self-aligned gate cut isolation | Ruilong Xie, Chanro Park, Min Gyu Sung, Guillaume Bouche | 2019-07-30 |
| 10361311 | Semiconductor structure including low-k spacer material | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie | 2019-07-23 |
| 10361315 | Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor | Chun-Chen Yeh, Ruilong Xie, Tenko Yamashita, Cheng Chi, Chen Zhang | 2019-07-23 |
| 10361308 | Self-aligned gate cut with polysilicon liner oxidation | Peng Xu | 2019-07-23 |
| 10361285 | Forming vertical transport field effect transistors with uniform bottom spacer thickness | Xuefeng Liu, Peng Xu, Yongan Xu | 2019-07-23 |
| 10361301 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-07-23 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Juntao Li, Peng Xu | 2019-07-23 |
| 10361155 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Ali Khakifirooz, Juntao Li | 2019-07-23 |
| 10361197 | FinFETs with controllable and adjustable channel doping | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-23 |
| 10361125 | Methods and structures for forming uniform fins when using hardmask patterns | Peng Xu, Yann Mignot, Choonghyun Lee | 2019-07-23 |
| 10361199 | Vertical transistor transmission gate with adjacent NFET and PFET | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2019-07-23 |
| 10361200 | Vertical fin field effect transistor with integral U-shaped electrical gate connection | Wenyu Xu, Chen Zhang, Xin Miao | 2019-07-23 |
| 10354921 | Stacked transistors with different channel widths | Lawrence A. Clevenger, Balasubramanian Pranatharthiharan, John H. Zhang | 2019-07-16 |
| 10355118 | Single-electron transistor with self-aligned coulomb blockade | Qing Cao, Zhengwen Li, Fei Liu | 2019-07-16 |
| 10347743 | Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer | Juntao Li, Peng Xu, Jingyun Zhang | 2019-07-09 |
| 10347744 | Method and structure of forming FinFET contact | Peng Xu | 2019-07-09 |
| 10347731 | Transistor with asymmetric spacers | Zhenxing Bi, Heng Wu, Peng Xu | 2019-07-09 |
| 10347752 | Semiconductor structures having increased channel strain using fin release in gate regions | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2019-07-09 |
| 10347628 | Simultaneously fabricating a high voltage transistor and a FinFET | Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2019-07-09 |
| 10347719 | Nanosheet transistors on bulk material | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-07-09 |
| 10347784 | Radiation sensor, method of forming the sensor and device including the sensor | Xin Miao, Wenyu Xu, Chen Zhang | 2019-07-09 |