Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10446665 | Method and structure for protecting gates during epitaxial growth | Ying Hao Hsieh | 2019-10-15 |
| 10388754 | Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2019-08-20 |
| 10361311 | Semiconductor structure including low-k spacer material | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2019-07-23 |
| 10355020 | FinFETs having strained channels, and methods of fabricating finFETs having strained channels | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2019-07-16 |
| 10355086 | High doped III-V source/drain junctions for field effect transistors | Qing Liu, Kejia Wang, Ruilong Xie, Chun-Chen Yeh | 2019-07-16 |
| 10290636 | Semiconductor device having fins with in-situ doped, punch-through stopper layer and related methods | Qing Liu, Chun-Chen Yeh, Ruilong Xie | 2019-05-14 |
| 10276573 | FinFET including tunable fin height and tunable fin width ratio | Qing Liu, Ruilong Xie, Chun-Chen Yeh | 2019-04-30 |
| 10256304 | High doped III-V source/drain junctions for field effect transistors | Qing Liu, Kejia Wang, Ruilong Xie, Chun-Chen Yeh | 2019-04-09 |
| 10249726 | Methods of forming a protection layer on a semiconductor device and the resulting device | Ruilong Xie, Chanro Park | 2019-04-02 |
| 10217869 | Semiconductor structure including low-K spacer material | Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2019-02-26 |