Issued Patents 2019
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10490454 | Minimize middle-of-line contact line shorts | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-11-26 |
| 10396200 | Method and structure of improving contact resistance for passive and long channel devices | Injo Ok, Soon-Cheon Seo, Balasubramanian Pranatharthiharan | 2019-08-27 |
| 10381458 | Semiconductor device replacement metal gate with gate cut last in RMG | Andrew M. Greene, Balasubramanian Pranatharthi Haran, Injo Ok | 2019-08-13 |
| 10361203 | FET trench dipole formation | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-07-23 |
| 10355080 | Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-07-16 |
| 10347632 | Forming spacer for trench epitaxial structures | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-07-09 |
| 10347628 | Simultaneously fabricating a high voltage transistor and a FinFET | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2019-07-09 |
| 10347633 | Spacer for trench epitaxial structures | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-07-09 |
| 10276569 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Alexander Reznicek | 2019-04-30 |
| 10256296 | Middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo | 2019-04-09 |
| 10249624 | Semiconductor structure containing low-resistance source and drain contacts | Injo Ok, Balasubramanian Pranatharthiharan | 2019-04-02 |
| 10243044 | FinFETs with high quality source/drain structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2019-03-26 |
| 10229852 | Self-aligned low dielectric constant gate cap and a method of forming the same | Balasubramanian Pranatharthiharan, Injo Ok | 2019-03-12 |
| 10177240 | FinFET device formed by a replacement metal-gate method including a gate cut-last step | Andrew M. Greene, Balasubramanian Pranatharthi Haran, Injo Ok | 2019-01-08 |