Issued Patents 2016
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530777 | FinFETs of different compositions formed on a same substrate | Nicolas Loubet, James Kuss | 2016-12-27 |
| 9520357 | Anti-fuse structure and method for manufacturing the same | Juntao Li, Junli Wang, Chih-Chao Yang | 2016-12-13 |
| 9515185 | Silicon germanium-on-insulator FinFET | Qing Liu, Bruce B. Doris | 2016-12-06 |
| 9515141 | FinFET device with channel strain | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2016-12-06 |
| 9515089 | Bulk fin formation with vertical fin sidewall profile | Kangguo Cheng, Sivananda K. Kanakasabapathy, Chiahsun Tseng, Yunpeng Yin | 2016-12-06 |
| 9508713 | Densely spaced fins for semiconductor fin field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-11-29 |
| 9508741 | CMOS structure on SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2016-11-29 |
| 9502411 | Strained finFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2016-11-22 |
| 9498770 | Ce-based composite oxide catalyst, preparation method and application thereof | Wenpo Shan, Fudong Liu, Xiaoyan Shi, Changbin Zhang, Shaoxin Wang | 2016-11-22 |
| 9496371 | Channel protection during fin fabrication | Russell H. Arndt, Gauri Karve, Fee Li Lie, Muthumanickam Sankarapandian | 2016-11-15 |
| 9496281 | Dual isolation on SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2016-11-15 |
| 9484201 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Juntao Li, Junli Wang, Chih-Chao Yang | 2016-11-01 |
| 9484440 | Methods for forming FinFETs with non-merged epitaxial fin extensions | Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-11-01 |
| 9472621 | CMOS structures with selective tensile strained NFET fins and relaxed PFET fins | Bruce B. Doris, Ali Khakifirooz, Joshua M. Rubin | 2016-10-18 |
| 9461174 | Method for the formation of silicon and silicon-germanium fin structures for FinFET devices | Nicolas Loubet, James Kuss | 2016-10-04 |
| 9455274 | Replacement fin process in SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2016-09-27 |
| 9431425 | Directly forming SiGe fins on oxide | Kangguo Cheng, Juntao Li, Junli Wang | 2016-08-30 |
| 9418900 | Silicon germanium and silicon fins on oxide from bulk wafer | Nicolas Loubet, James Kuss, Junli Wang | 2016-08-16 |
| 9406746 | Work function metal fill for replacement gate fin field effect transistor process | Junli Wang, Yongan Xu, Yunpeng Yin | 2016-08-02 |
| 9401372 | Dual isolation on SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2016-07-26 |
| 9391155 | Gate structure integration scheme for fin field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-07-12 |
| 9379221 | Bottom-up metal gate formation on replacement metal gate finFET devices | Juntao Li, Junli Wang, Chih-Chao Yang | 2016-06-28 |
| 9379218 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yunpeng Yin | 2016-06-28 |
| 9368350 | Tone inverted directed self-assembly (DSA) fin patterning | Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng, Tenko Yamashita | 2016-06-14 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-06-07 |