Issued Patents 2005
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6974771 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Fusen Chen, Walter Glenn, Praburam Gopalraja, Jianming Fu | 2005-12-13 |
| 6972267 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Wei Cao, Hua Chung, Vincent Ku | 2005-12-06 |
| 6958296 | CVD TiSiN barrier for copper integration | Christophe Marcadal, Hyungsuk Alexander Yoon | 2005-10-25 |
| 6955211 | Method and apparatus for gas temperature control in a semiconductor processing system | Vincent Ku, Dien-Yeh Wu, Alan Ouye, Irena H. Wysok | 2005-10-18 |
| 6953742 | Tantalum barrier layer for copper metallization | Seshadri Ganguli, Wei Cao, Christophe Marcadal | 2005-10-11 |
| 6939801 | Selective deposition of a barrier layer on a dielectric material | Hua Chung, Vincent Ku, Michael Yang, Gongda Yao | 2005-09-06 |
| 6936906 | Integration of barrier layer and seed layer | Hua Chung, Jick Yu, Mei Chang | 2005-08-30 |
| 6916398 | Gas delivery apparatus and method for atomic layer deposition | Vincent Ku, Dien-Yeh Wu, Hua Chung, Alan Ouye, Norman Nakashima | 2005-07-12 |
| 6905541 | Method and apparatus of generating PDMAT precursor | Vincent Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin +3 more | 2005-06-14 |
| 6872429 | Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber | Seshadri Ganguli, Alfred Mak | 2005-03-29 |
| 6838125 | Method of film deposition using activated precursor gases | Hua Chung, Vincent Ku | 2005-01-04 |