Issued Patents All Time
Showing 51–75 of 244 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11316096 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2022-04-26 |
| 11315861 | Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Yu-Wen Liao | 2022-04-26 |
| 11296147 | Method for manufacturing memory device having spacer | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chin-Yu Mei, Po-Hao Tseng | 2022-04-05 |
| 11276819 | Metal landing on top electrode of RRAM | Chih-Yang Chang | 2022-03-15 |
| 11257844 | Ferroelectric random access memory (FRAM) cell | Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu | 2022-02-22 |
| 11239279 | Resistive switching random access memory with asymmetric source and drain | Chin-Chieh Yang, Hsia-Wei Chen, Chih-Yang Chang, Kuo-Chi Tu, Yu-Wen Liao | 2022-02-01 |
| 11227872 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Tzu-Yu Chen, Fu-Chen Chang | 2022-01-18 |
| 11201281 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2021-12-14 |
| 11201190 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Yu-Wen Liao | 2021-12-14 |
| 11195840 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Yong-Shiuan Tsair | 2021-12-07 |
| 11189788 | RRAM bottom electrode | Fu-Chen Chang, Kuo-Chi Tu | 2021-11-30 |
| 11183631 | Electrode structure to improve RRAM performance | Tong-Chern Ong, Ying-Lang Wang | 2021-11-23 |
| 11183503 | Memory cell having top and bottom electrodes defining recesses | Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Chih-Hsiang Chang, Fu-Chen Chang | 2021-11-23 |
| 11107982 | RRAM structure | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chin-Yu Mei, Po-Hao Tseng | 2021-08-31 |
| 11094744 | Interconnect landing method for RRAM technology | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu +1 more | 2021-08-17 |
| 11037989 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Yu-Wen Liao | 2021-06-15 |
| 11037941 | Method for forming an integrated circuit and an integrated circuit | Tzu-Yu Chen, Kuo-Chi Tu, Yong-Shiuan Tsair | 2021-06-15 |
| 11038108 | Step height mitigation in resistive random access memory structures | Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Yu-Wen Liao, Huei-Tzu Wang | 2021-06-15 |
| 11037990 | Method to form memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Yu-Wen Liao | 2021-06-15 |
| 11024381 | Resistive random access memory device | Yu-Der Chih, Chung-Cheng Chou | 2021-06-01 |
| 11017852 | Method of forming memory device | Kuo-Chi Tu, Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su | 2021-05-25 |
| 11011224 | Memory device and method for forming the same | Kuo-Chi Tu, Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su | 2021-05-18 |
| 11004975 | Semiconductor device and manufacturing method thereof | Kuo-Chi Tu, Jen-Sheng Yang, Sheng-Hung Shih, Tong-Chern Ong | 2021-05-11 |
| 10985316 | Bottom electrode structure in memory device | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Pili Huang, Cheng-Jun Wu | 2021-04-20 |
| 10950784 | RRAM with a barrier layer | Fu-Chen Chang, Kuo-Chi Tu, Chu-Jie Huang | 2021-03-16 |