Issued Patents All Time
Showing 26–50 of 244 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11856788 | Semiconductor device and method of fabricating the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu, Alexander Kalnitsky | 2023-12-26 |
| 11844286 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-12-12 |
| 11839090 | Memory cells separated by a void-free dielectric structure | Hsia-Wei Chen, Yu-Wen Liao | 2023-12-05 |
| 11832529 | Memory device | Harry-Hak-Lay Chuang, Hung Cho Wang, Tong-Chern Ong, Yu-Wen Liao, Kuei-Hung Shen +2 more | 2023-11-28 |
| 11800720 | Memory cell having a top electrode interconnect arranged laterally from a recess | Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Chih-Hsiang Chang, Fu-Chen Chang | 2023-10-24 |
| 11785777 | FeRAM MFM structure with selective electrode etch | Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Tzu-Yu Chen, Fu-Chen Chang | 2023-10-10 |
| 11751485 | Flat bottom electrode via (BEVA) top surface for memory | Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Sheng-Hung Shih +3 more | 2023-09-05 |
| 11751405 | Integrated circuit and method for fabricating the same | Chieh-Fei Chiu, Yong-Shiuan Tsair, Yu-Wen Liao, Chih-Yang Chang, Chin-Chieh Yang | 2023-09-05 |
| 11737290 | RRAM memory cell with multiple filaments | Chin-Chieh Yang, Chih-Yang Chang, Yu-Wen Liao | 2023-08-22 |
| 11723292 | RRAM cell structure with laterally offset BEVA/TEVA | Chih-Yang Chang, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen, Chin-Chieh Yang +2 more | 2023-08-08 |
| 11723294 | Memory device and method for fabricating the same | Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Yu-Wen Liao | 2023-08-08 |
| 11706930 | Semiconductor device and method for manufacturing the same | Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu | 2023-07-18 |
| 11696521 | High electron affinity dielectric layer to improve cycling | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Cheng-Jun Wu | 2023-07-04 |
| 11683999 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Hsing-Lien Lin | 2023-06-20 |
| 11682456 | Methods for enlarging the memory window and improving data retention in restistive memory device | Fu-Chen Chang, Chu-Jie Huang, Nai-Chao Su, Kuo-Chi Tu | 2023-06-20 |
| 11678592 | Step height mitigation in resistive random access memory structures | Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Yu-Wen Liao, Huei-Tzu Wang | 2023-06-13 |
| 11678494 | Memory layout for reduced line loading | Chih-Yang Chang | 2023-06-13 |
| 11637239 | High yield RRAM cell with optimized film scheme | Trinh Hai Dang, Hsing-Lien Lin, Cheng-Yuan Tsai, Chin-Chieh Yang, Yu-Wen Liao +1 more | 2023-04-25 |
| 11631810 | Bottom electrode structure in memory device | Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Pili Huang, Cheng-Jun Wu | 2023-04-18 |
| 11611038 | Method for forming RRAM with a barrier layer | Fu-Chen Chang, Kuo-Chi Tu, Chu-Jie Huang | 2023-03-21 |
| 11557344 | Resistive random access memory device | Yu-Der Chih, Chung-Cheng Chou | 2023-01-17 |
| 11437084 | Embedded ferroelectric memory cell | Tzu-Yu Chen, Kuo-Chi Tu, Yong-Shiuan Tsair | 2022-09-06 |
| 11387411 | Logic compatible RRAM structure and process | Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Kuo-Chi Tu, Yu-Wen Liao | 2022-07-12 |
| 11362271 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Hsing-Lien Lin | 2022-06-14 |
| 11329221 | Electrode structure to improve RRAM performance | Tong-Chern Ong, Ying-Lang Wang | 2022-05-10 |