Issued Patents All Time
Showing 76–100 of 108 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9443861 | Fluorine-blocking insulating spacer for backside contact structure of three-dimensional memory structures | Ching-Huang Lu, Johann Alsmeier | 2016-09-13 |
| 9443865 | Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2016-09-13 |
| 9437606 | Method of making a three-dimensional memory array with etch stop | Raghuveer S. Makala, Johann Alsmeier, Yao-Sheng Lee, Masanori Terahara, Hirofumi Watatani | 2016-09-06 |
| 9425299 | Three-dimensional memory device having a heterostructure quantum well channel | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2016-08-23 |
| 9419135 | Three dimensional NAND device having reduced wafer bowing and method of making thereof | Matthias Baenninger, Johann Alsmeier | 2016-08-16 |
| 9406690 | Contact for vertical memory with dopant diffusion stopper and associated fabrication method | Liang Pang, Yingda Dong | 2016-08-02 |
| 9368509 | Three-dimensional memory structure having self-aligned drain regions and methods of making thereof | Liang Pang, Yingda Dong | 2016-06-14 |
| 9368510 | Method of forming memory cell with high-k charge trapping layer | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2016-06-14 |
| 9356031 | Three dimensional NAND string memory devices with voids enclosed between control gate electrodes | Yao-Sheng Lee, Raghuveer S. Makala, George Matamis, Johann Alsmeier, Henry Chien | 2016-05-31 |
| 9331093 | Three dimensional NAND device with silicon germanium heterostructure channel | Peter Rabkin | 2016-05-03 |
| 9287290 | 3D memory having crystalline silicon NAND string channel | Peter Rabkin, Johann Alsmeier, Masaaki Higashitani | 2016-03-15 |
| 9269446 | Methods to improve programming of slow cells | Sagar Magia, Jagdish Sabde, Ankitkumar Babariya | 2016-02-23 |
| 9240249 | AC stress methods to screen out bit line defects | Jagdish Sabde, Sagar Magia | 2016-01-19 |
| 9236131 | Bias to detect and prevent short circuits in three-dimensional memory device | Jiahui Yuan, Yingda Dong, Wei Zhao | 2016-01-12 |
| 9230973 | Methods of fabricating a three-dimensional non-volatile memory device | Johann Alsmeier, Raghuveer S. Makala, Yao-Sheng Lee | 2016-01-05 |
| 9230987 | Multilevel memory stack structure and methods of manufacturing the same | Johann Alsmeier, Henry Chien | 2016-01-05 |
| 9230982 | Protective structure to prevent short circuits in a three-dimensional memory device | Jiahui Yuan, Yingda Dong, Wei Zhao | 2016-01-05 |
| 9230980 | Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device | Peter Rabkin, Johann Alsmeier | 2016-01-05 |
| 9230979 | High dielectric constant etch stop layer for a memory structure | Johann Alsmeier | 2016-01-05 |
| 9230974 | Methods of selective removal of blocking dielectric in NAND memory strings | Johann Alsmeier, George Matamis, Henry Chien | 2016-01-05 |
| 9224502 | Techniques for detection and treating memory hole to local interconnect marginality defects | Jagdish Sabde, Sagar Magia, Deepak Raghu | 2015-12-29 |
| 9209031 | Metal replacement process for low resistance source contacts in 3D NAND | Matthias Baenninger, Johann Alsmeier, Akira Matsudaira | 2015-12-08 |
| 9202593 | Techniques for detecting broken word lines in non-volatile memories | Sagar Magia, Jagdish Sabde, Tien-Chien Kuo | 2015-12-01 |
| 9177966 | Three dimensional NAND devices with air gap or low-k core | Peter Rabkin, Wei Zhao, Yanli Zhang | 2015-11-03 |
| 9123714 | Metal layer air gap formation | Hiroyuki Kinoshita, Vinod R. Purayath, George Matamis | 2015-09-01 |