PS

Philippe Schoenborn

Lsi Logic: 28 patents #24 of 1,957Top 2%
Cypress Semiconductor: 1 patents #1,072 of 1,852Top 60%
LS Lsi: 1 patents #914 of 1,740Top 55%
Overall (All Time): #132,717 of 4,157,543Top 4%
29
Patents All Time

Issued Patents All Time

Showing 25 most recent of 29 patents

Patent #TitleCo-InventorsDate
7379836 Method of using automated test equipment to screen for leakage inducing defects after calibration to intrinsic leakage Ramit Bhandari, Tony Lo, Anh-Ha Tran 2008-05-27
7071113 Process for removal of photoresist mask used for making vias in low K carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask Yong-Bae Kim 2006-07-04
6969683 Method of preventing resist poisoning in dual damascene structures Rongxiang Hu, Yongbae Kim, Sang-Yun Lee, Hiroaki Takikawa, Shumay X. Dou +5 more 2005-11-29
6846569 Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication John Hu, Ana Ley 2005-01-25
6743725 High selectivity SiC etch in integrated circuit fabrication Rongxiang Hu, Masaichi Eda 2004-06-01
6713386 Method of preventing resist poisoning in dual damascene structures Rongxiang Hu, Yongbae Kim, Sang-Yun Lee, Hiroaki Takikawa, Shumay X. Dou +5 more 2004-03-30
6673721 PROCESS FOR REMOVAL OF PHOTORESIST MASK USED FOR MAKING VIAS IN LOW K CARBON-DOPED SILICON OXIDE DIELECTRIC MATERIAL, AND FOR REMOVAL OF ETCH RESIDUES FROM FORMATION OF VIAS AND REMOVAL OF PHOTORESIST MASK Yong-Bae Kim 2004-01-06
6579777 Method of forming local oxidation with sloped silicon recess Ting-Pwu Yen, Pamela Trammel, Alexander H. Owens 2003-06-17
6576404 Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication John Hu, Ana Ley 2003-06-10
6559048 Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning Yong-Bae Kim, Kai Zhang 2003-05-06
6506670 Self aligned gate 2003-01-14
6503840 Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning Wilbur G. Catabay, Wei-Jen Hsia, Hong-Qiang Lu, Yong-Bae Kim, Kiran Kumar +2 more 2003-01-07
6350700 Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure Richard Schinella, Wilbur G. Catabay 2002-02-26
6062163 Plasma initiating assembly Roger Patrick, Mark Franklin, Frank Bose 2000-05-16
5902704 Process for forming photoresist mask over integrated circuit structures with critical dimension control John Haywood 1999-05-11
5877530 Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation Sheldon Aronowitz, Laique Khan 1999-03-02
5663083 Process for making improved MOS structure with hot carrier reduction Sungki O 1997-09-02
5639519 Method for igniting low pressure inductively coupled plasma Roger Patrick, Mark Franklin, Frank Bose 1997-06-17
5598021 MOS structure with hot carrier reduction Sungki O 1997-01-28
5578165 Coil configurations for improved uniformity in inductively coupled plasma systems Roger Patrick, Frank Bose, Harry Toda 1996-11-26
5474648 Uniform and repeatable plasma processing Roger Patrick, Frank Bose 1995-12-12
5468296 Apparatus for igniting low pressure inductively coupled plasma Roger Patrick, Mark Franklin, Frank Bose 1995-11-21
5413966 Shallow trench etch 1995-05-09
5401350 Coil configurations for improved uniformity in inductively coupled plasma systems Roger Patrick, Frank Bose, Harry Toda 1995-03-28
5362356 Plasma etching process control 1994-11-08