Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7393780 | Dual layer barrier film techniques to prevent resist poisoning | Hong-Qiang Lu, Wilbur G. Catabay | 2008-07-01 |
| 7312127 | Incorporating dopants to enhance the dielectric properties of metal silicates | Wai Lo, Verne Hornback, Wilbur G. Catabay, Sey-Shing Sun | 2007-12-25 |
| 7259462 | Interconnect dielectric tuning | Wai Lo, Hong Lin, Shiqun Gu, Wilbur G. Catabay, Zhihai Wang | 2007-08-21 |
| 7220362 | Planarization with reduced dishing | Wilbur G. Catabay, Hao Cui | 2007-05-22 |
| 7081406 | Interconnect dielectric tuning | Wai Lo, Hong Lin, Shiqun Gu, Wilbur G. Catabay, Zhihai Wang | 2006-07-25 |
| 7071094 | Dual layer barrier film techniques to prevent resist poisoning | Hong-Qiang Lu, Wilbur G. Catabay | 2006-07-04 |
| 7064062 | Incorporating dopants to enhance the dielectric properties of metal silicates | Wai Lo, Verne Hornback, Wilbur G. Catabay, Sey-Shing Sun | 2006-06-20 |
| 7029591 | Planarization with reduced dishing | Wilbur G. Catabay, Hao Cui | 2006-04-18 |
| 6930056 | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure | Wilbur G. Catabay | 2005-08-16 |
| 6881664 | Process for planarizing upper surface of damascene wiring structure for integrated circuit structures | Wilbur G. Catabay, Richard Schinella, Zhihai Wang | 2005-04-19 |
| 6812134 | Dual layer barrier film techniques to prevent resist poisoning | Hong-Qiang Lu, Wilbur G. Catabay | 2004-11-02 |
| 6794756 | Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines | Weidan Li, Wilbur G. Catabay | 2004-09-21 |
| 6790784 | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure | Wilbur G. Catabay | 2004-09-14 |
| 6774057 | Method and structure for forming dielectric layers having reduced dielectric constants | Hong-Qiang Lu, Wilbur G. Catabay | 2004-08-10 |
| 6756674 | Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same | Wilbur G. Catabay, Weidan Li, Joe W. Zhao | 2004-06-29 |
| 6686272 | Anti-reflective coatings for use at 248 nm and 193 nm | Sang-Yun Lee, Masaichi Eda, Hongqiang Lu, Wilbur G. Catabay, Hiroaki Takikawa +1 more | 2004-02-03 |
| 6613665 | Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface | Wilbur G. Catabay | 2003-09-02 |
| 6537896 | Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material | Wilbur G. Catabay | 2003-03-25 |
| 6528423 | PROCESS FOR FORMING COMPOSITE OF BARRIER LAYERS OF DIELECTRIC MATERIAL TO INHIBIT MIGRATION OF COPPER FROM COPPER METAL INTERCONNECT OF INTEGRATED CIRCUIT STRUCTURE INTO ADJACENT LAYER OF LOW K DIELECTRIC MATERIAL | Wilbur G. Catabay | 2003-03-04 |
| 6503840 | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning | Wilbur G. Catabay, Hong-Qiang Lu, Yong-Bae Kim, Kiran Kumar, Kai Zhang +2 more | 2003-01-07 |
| 6492731 | Composite low dielectric constant film for integrated circuit structure | Wilbur G. Catabay, Kai Zhang | 2002-12-10 |
| 6423628 | Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines | Weidan Li, Wilbur G. Catabay | 2002-07-23 |
| 6423630 | Process for forming low K dielectric material between metal lines | Wilbur G. Catabay, Dung-Ching Perng | 2002-07-23 |
| 6420277 | Process for inhibiting crack formation in low dielectric constant dielectric films of integrated circuit structure | Wilbur G. Catabay, Hong Qiang | 2002-07-16 |
| 6346490 | Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps | Wilbur G. Catabay, Alex Kabansky | 2002-02-12 |