Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6297555 | Method to obtain a low resistivity and conformity chemical vapor deposition titanium film | Joe W. Zhao, Wilbur G. Catabay | 2001-10-02 |
| 6232658 | Process to prevent stress cracking of dielectric films on semiconductor wafers | Wilbur G. Catabay, Joe W. Zhao | 2001-05-15 |
| 6204192 | Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures | Joe W. Zhao, Wilbur G. Catabay | 2001-03-20 |
| 6204550 | Method and composition for reducing gate oxide damage during RF sputter clean | Zhihai Wang, Wilbur G. Catabay | 2001-03-20 |
| 6147012 | Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant | Valeriy Sukharev | 2000-11-14 |
| 6114259 | Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage | Valeriy Sukharev, Warren M. Uesato, John Hu, Linggian Qian | 2000-09-05 |
| 5994211 | Method and composition for reducing gate oxide damage during RF sputter clean | Zhihai Wang, Wilbur G. Catabay | 1999-11-30 |
| 5895267 | Method to obtain a low resistivity and conformity chemical vapor deposition titanium film | Joe W. Zhao, Wilbur G. Catabay | 1999-04-20 |
| 5789028 | Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride | Joe W. Zhao, Wilbur G. Catabay | 1998-08-04 |
| 5719084 | Method for the controlled formation of voids in doped glass dielectric films | Thomas G. Mallon, Chi-Yi Kao, Atsushi Shimoda | 1998-02-17 |
| 5278103 | Method for the controlled formation of voids in doped glass dielectric films | Thomas G. Mallon, Chi-Yi Kao, Atsushi Shimoda | 1994-01-11 |