| 6794698 |
Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
Yauh-Ching Liu |
2004-09-21 |
| 6523494 |
Apparatus for depositing low dielectric constant oxide film |
Peter Wai-Man Lee, Thomas E. Deacon |
2003-02-25 |
| 6423630 |
Process for forming low K dielectric material between metal lines |
Wilbur G. Catabay, Wei-Jen Hsia |
2002-07-23 |
| 6369418 |
Formation of a novel DRAM cell |
Yauh-Ching Liu |
2002-04-09 |
| 6365452 |
DRAM cell having a vertical transistor and a capacitor formed on the sidewalls of a trench isolation |
Yauh-Ching Liu |
2002-04-02 |
| 6177699 |
DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation |
Yauh-Ching Liu |
2001-01-23 |
| 6149987 |
Method for depositing low dielectric constant oxide films |
Peter Wai-Man Lee, Thomas E. Deacon |
2000-11-21 |
| 6090239 |
Method of single step damascene process for deposition and global planarization |
Yauh-Ching Liu |
2000-07-18 |
| 6090661 |
Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
Yauh-Ching Liu |
2000-07-18 |
| 6066570 |
Method and apparatus for preventing formation of black silicon on edges of wafers |
David M. Dobuzinsky, Ting Wang, Klaus Roithner |
2000-05-23 |
| 6033997 |
Reduction of black silicon in semiconductor fabrication |
— |
2000-03-07 |
| 6004880 |
Method of single step damascene process for deposition and global planarization |
Yauh-Ching Liu |
1999-12-21 |
