MT

Minh Quoc Tran

AM AMD: 26 patents #370 of 9,279Top 4%
SL Spansion Llc.: 7 patents #128 of 769Top 20%
Cypress Semiconductor: 1 patents #1,072 of 1,852Top 60%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
Overall (All Time): #103,544 of 4,157,543Top 3%
34
Patents All Time

Issued Patents All Time

Showing 25 most recent of 34 patents

Patent #TitleCo-InventorsDate
9425325 Electrically programmable and eraseable memory device Minh Van Ngo, Alexander H. Nickel, Jeong-Uk Huh 2016-08-23
8735960 High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance Minh Van Ngo, Alexander H. Nickel, Sung Jin Kim, Simon S. Chan, Ning Cheng 2014-05-27
8633074 Electrically programmable and erasable memory device and method of fabrication thereof Minh Van Ngo, Alexander H. Nickel, Jeong-Uk Huh 2014-01-21
8415256 Gap-filling with uniform properties Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Van Ngo, Hieu Pham +2 more 2013-04-09
8202810 Low-H plasma treatment with N2 anneal for electronic memory devices Alexander H. Nickel, Allen L. Evans, Lu You, Minh Van Ngo, Pei-Yuan Gao +4 more 2012-06-19
8026169 Cu annealing for improved data retention in flash memory devices Lu You, Alexander H. Nickel, Minh Van Ngo, Hieu Pham, Erik Wilson +4 more 2011-09-27
7884030 Gap-filling with uniform properties Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Van Ngo, Hieu Pham +2 more 2011-02-08
7776682 Ordered porosity to direct memory element formation Alexander H. Nickel, Suzette K. Pangrle, Steven C. Avanzino, Jeffrey A. Shields, Fei Wang +2 more 2010-08-17
7534732 Semiconductor devices with copper interconnects and composite silicon nitride capping layers Minh Van Ngo, Erik Wilson, Hieu Pham, Robert A. Huertas, Lu You +2 more 2009-05-19
7256499 Ultra low dielectric constant integrated circuit system Lu You, Fei Wang, Lynne A. Okada 2007-08-14
7208418 Sealing sidewall pores in low-k dielectrics Lynne A. Okada, Fei Wang, Lu You 2007-04-24
7199416 Systems and methods for a memory and/or selection element formed within a recess in a metal line Nicholas H. Tripsas, Jeffrey A. Shields 2007-04-03
7169706 Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition Sergey Lopatin, Paul R. Besser, Alline F. Myers, Jeremias D. Romero, Lu You +1 more 2007-01-30
7129133 Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film Steven C. Avanzino 2006-10-31
7001840 Interconnect with multiple layers of conductive material with grain boundary between the layers Lu You, Fei Wang, Lynne A. Okada 2006-02-21
6998337 Thermal annealing for Cu seed layer enhancement 2006-02-14
6992004 Implanted barrier layer to improve line reliability and method of forming same Paul R. Besser, Matthew S. Buynoski, Pin-Chin Connie Wang, Lu You, Sergey Lopatin +1 more 2006-01-31
6979642 Method of self-annealing conductive lines that separates grain size effects from alloy mobility Matthew S. Buynoski, Connie P. Wang, Paul R. Besser 2005-12-27
6756300 Method for forming dual damascene interconnect structure Fei Wang, Jerry Cheng, Lynne A. Okada, Lu You 2004-06-29
6664187 Laser thermal annealing for Cu seedlayer enhancement Minh Van Ngo 2003-12-16
6649034 Electro-chemical metal alloying for semiconductor manufacturing Amit P. Marathe, Pin-Chin Connie Wang 2003-11-18
6609946 Method and system for polishing a semiconductor wafer 2003-08-26
6589408 Non-planar copper alloy target for plasma vapor deposition systems Pin-Chin Connie Wang, Paul R. Besser, Sergey Lopatin 2003-07-08
6583051 Method of manufacturing an amorphized barrier layer for integrated circuit interconnects Sergey Lopatin, Minh Van Ngo 2003-06-24
6566248 Graphoepitaxial conductor cores in integrated circuit interconnects Pin-Chin Connie Wang 2003-05-20