Issued Patents All Time
Showing 126–150 of 495 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more | 2017-05-02 |
| 9640422 | III-N devices in Si trenches | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9614083 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-04-04 |
| 9608055 | Semiconductor device having germanium active layer with underlying diffusion barrier layer | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Harold W. Kennel | 2017-03-28 |
| 9590089 | Variable gate width for gate all-around transistors | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Seung Hoon Sung | 2017-03-07 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more | 2017-03-07 |
| 9583574 | Epitaxial buffer layers for group III-N transistors on silicon substrates | Sansaptak Dasgupta, Han Wui Then, Niloy Mukherjee, Marko Radosavljevic | 2017-02-28 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more | 2017-02-28 |
| 9577190 | Thermal management structure for low-power nonvolatile filamentary switch | Elijah V. Karpov, Prashant Majhi, Niloy Mukherjee, Ravi Pillarisetty, Uday Shah +1 more | 2017-02-21 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2017-02-14 |
| 9548449 | Conductive oxide random access memory (CORAM) cell and method of fabricating same | Elijah V. Karpov, Brian S. Doyle, Uday Shah | 2017-01-17 |
| 9548441 | Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer | Kaan Oguz, Mark L. Doczy, Brian S. Doyle, Uday Shah, David L. Kencke +1 more | 2017-01-17 |
| 9548363 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian +3 more | 2017-01-17 |
| 9543507 | Selector for low voltage embedded memory | Charles C. Kuo, Elijah V. Karpov, Brian S. Doyle, David L. Kencke | 2017-01-10 |
| 9530878 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2016-12-27 |
| 9502568 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Van H. Le | 2016-11-22 |
| 9490364 | Semiconductor transistor having a stressed channel | Anand S. Murthy, Tahir Ghani, Kaizad Mistry | 2016-11-08 |
| 9478734 | Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same | Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Uday Shah, Elijah V. Karpov +2 more | 2016-10-25 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2016-10-25 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-10-04 |
| 9455343 | Hybrid phase field effect transistor | Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah +1 more | 2016-09-27 |
| 9437706 | Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes | Niloy Mukherjee, Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros | 2016-09-06 |
| 9437298 | Self-storing and self-restoring non-volatile static random access memory | Shigeki Tomishima, Dmitri E. Nikonov, Elijah V. Karpov, Ian A. Young | 2016-09-06 |
| 9397188 | Group III-N nanowire transistors | Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-07-19 |