Issued Patents All Time
Showing 276–300 of 495 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7859081 | Capacitor, method of increasing a capacitance area of same, and system containing same | Brian S. Doyle, Suman Datta, Vivek K. De, Ali Keshavarzi, Dinesh Somasekhar | 2010-12-28 |
| 7851790 | Isolated Germanium nanowire on Silicon fin | Willy Rachmady, Been-Yih Jin, Ravi Pillarisetty | 2010-12-14 |
| 7825481 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2010-11-02 |
| 7821061 | Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications | Been-Yih Jin, Brian S. Doyle, Jack T. Kavalieros | 2010-10-26 |
| 7820513 | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | Scott A. Hareland, Brian S. Doyle, Rafael Rios, Tom Linton, Suman Datta | 2010-10-26 |
| 7800166 | Recessed channel array transistor (RCAT) structures and method of formation | Brian S. Doyle, Ravi Pillarisetty, Gilbert Dewey | 2010-09-21 |
| 7785958 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +2 more | 2010-08-31 |
| 7776684 | Increasing the surface area of a memory cell capacitor | Brian S. Doyle, Vivek K. De, Suman Datta, Dinesh Somasekhar | 2010-08-17 |
| 7767560 | Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method | Been-Yih Jin, Brian S. Doyle, Jack T. Kavalieros | 2010-08-03 |
| 7767519 | One transistor/one capacitor dynamic random access memory (1T/1C DRAM) cell | Brian S. Doyle, Dinesh Somasekhar | 2010-08-03 |
| 7736956 | Lateral undercut of metal gate in SOI device | Suman Datta, Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Gilbert Dewey +1 more | 2010-06-15 |
| 7727830 | Fabrication of germanium nanowire transistors | Been-Yih Jin, Jack T. Kavalieros, Matthew V. Metz, Marko Radosavlievic | 2010-06-01 |
| 7718479 | Forming integrated circuits with replacement metal gate electrodes | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta +1 more | 2010-05-18 |
| 7713803 | Mechanism for forming a remote delta doping layer of a quantum well structure | Been-Yih Jin, Jack T. Kavalieros, Suman Datta, Amlan Majumdar | 2010-05-11 |
| 7714397 | Tri-gate transistor device with stress incorporation layer and method of fabrication | Scott A. Hareland, Brian S. Doyle, Suman Datta, Been-Yih Jin | 2010-05-11 |
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask +4 more | 2010-05-04 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz +3 more | 2010-04-27 |
| 7682916 | Field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Patrick Morrow, Chia-Hong Jan, Paul Packan | 2010-03-23 |
| 7671414 | Semiconductor on insulator apparatus | Been-Yih Jin, Reza Arghavani | 2010-03-02 |
| 7671471 | Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2010-03-02 |
| 7666727 | Semiconductor device having a laterally modulated gate workfunction and method of fabrication | Brian S. Doyle, Scott A. Hareland, Mark L. Doczy | 2010-02-23 |
| 7662689 | Strained transistor integration for CMOS | Boyan Boyanov, Anand S. Murthy, Brian S. Doyle | 2010-02-16 |
| 7642610 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin +1 more | 2010-01-05 |
| 7638383 | Faceted catalytic dots for directed nanotube growth | Been-Yih Jin, Brian S. Doyle, Marko Radosavljevic | 2009-12-29 |
| 7615441 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2009-11-10 |