Issued Patents All Time
Showing 301–325 of 495 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7608883 | Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric | Marko Radosavljevic, Amlan Majumdar, Suman Datta, Justin K. Brask, Brian S. Doyle | 2009-10-27 |
| 7598560 | Hetero-bimos injection process for non-volatile flash memory | Jack T. Kavalieros, Suman Datta, David L. Kencke | 2009-10-06 |
| 7579280 | Method of patterning a film | Justin K. Brask, Brian S. Doyle, Uday Shah | 2009-08-25 |
| 7575991 | Removing a high-k gate dielectric | Mark L. Doczy, Robert Norman, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz +1 more | 2009-08-18 |
| 7569869 | Transistor having tensile strained channel and system including same | Been-Yih Jin, Suman Datta, Jack T. Kavalieros, Marko Radosavlievic | 2009-08-04 |
| 7569443 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz +2 more | 2009-08-04 |
| 7566898 | Buffer architecture formed on a semiconductor wafer | Mantu K. Hudait, Dmitri Loubychev, Suman Datta, Joel M. Fastenau, Amy W. K. Liu | 2009-07-28 |
| 7560756 | Tri-gate devices and methods of fabrication | Brian S. Doyle, Jack T. Kavalieros, Douglas Barlage, Suman Datta | 2009-07-14 |
| 7550333 | Nonplanar device with thinned lower body portion and method of fabrication | Uday Shah, Brian S. Doyle, Justin K. Brask, Thomas A. Letson | 2009-06-23 |
| 7547637 | Methods for patterning a semiconductor film | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Suman Datta, Amlan Majumdar +1 more | 2009-06-16 |
| 7531404 | Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer | Sangwoo Pae, Jose Maiz, Justin K. Brask, Gilbert Dewey, Jack T. Kavalieros +1 more | 2009-05-12 |
| 7531393 | Non-planar MOS structure with a strained channel region | Brian S. Doyle, Suman Datta, Been-Yih Jin | 2009-05-12 |
| 7531437 | Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material | Justin K. Brask, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy, Uday Shah | 2009-05-12 |
| 7528025 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian Dovle, Jack Kavalleros, Mark L. Doczy, Uday Shah | 2009-05-05 |
| 7525160 | Multigate device with recessed strain regions | Jack T. Kavalieros, Justin K. Brask, Suman Datta, Brian S. Doyle | 2009-04-28 |
| 7518196 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2009-04-14 |
| 7514346 | Tri-gate devices and methods of fabrication | Brian S. Doyle, Jack T. Kavalieros, Douglas Barlage, Suman Datta, Scott A. Hareland | 2009-04-07 |
| 7504678 | Tri-gate devices and methods of fabrication | Brian S. Doyle, Jack T. Kavalieros, Douglas Barlage, Suman Datta | 2009-03-17 |
| 7501336 | Metal gate device with reduced oxidation of a high-k gate dielectric | Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask, Matthew V. Mertz, Mark L. Doczy +1 more | 2009-03-10 |
| 7494862 | Methods for uniform doping of non-planar transistor structures | Brian S. Doyle, Suman Datta, Jack T. Kavalieros | 2009-02-24 |
| 7492017 | Semiconductor transistor having a stressed channel | Anand S. Murthy, Tahir Ghani | 2009-02-17 |
| 7485536 | Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers | Been-Yih Jin, Brian S. Doyle, Jack T. Kavalieros | 2009-02-03 |
| 7485503 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Suman Datta, Mark L. Doczy, James M. Blackwell, Matthew V. Metz +1 more | 2009-02-03 |
| 7479421 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Jack T. Kavalieros, Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta +2 more | 2009-01-20 |
| 7473947 | Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby | Anand S. Murthy, Brian S. Doyle, Jack T. Kavalieros | 2009-01-06 |