Issued Patents All Time
Showing 351–375 of 495 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta | 2008-06-10 |
| 7381608 | Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode | Justin K. Brask, Sangwoo Pae, Jack T. Kavalieros, Matthew V. Metz, Mark L. Doczy +2 more | 2008-06-03 |
| 7361958 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy, Uday Shah | 2008-04-22 |
| 7358121 | Tri-gate devices and methods of fabrication | Brian S. Doyle, Jack T. Kavalieros, Douglas Barlage, Suman Datta | 2008-04-15 |
| 7355281 | Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2008-04-08 |
| 7355254 | Pinning layer for low resistivity N-type source drain ohmic contacts | Suman Datta, Jack T. Kavalieros, Mark L. Doczy | 2008-04-08 |
| 7348284 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Suman Datta, Been-Yih Jin, Nancy Zelick | 2008-03-25 |
| 7342277 | Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric | Marko Radosavljevic, Amlan Majumdar, Suman Datta, Justin K. Brask, Brian S. Doyle | 2008-03-11 |
| 7338873 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Patrick Morrow, Chia-Hong Jan, Paul Packan | 2008-03-04 |
| 7329913 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian S. Doyle, Mark L. Doczy | 2008-02-12 |
| 7326652 | Atomic layer deposition using photo-enhanced bond reconfiguration | Matthew V. Metz, Scott A. Hareland | 2008-02-05 |
| 7326656 | Method of forming a metal oxide dielectric | Justin K. Brask, Brian S. Doyle, Jack Kavalleros, Mark L. Doczy, Uday Shah | 2008-02-05 |
| 7323423 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2008-01-29 |
| 7317231 | Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode | Matthew V. Metz, Suman Datta, Mark L. Doczy, Jack T. Kavalieros, Justin K. Brask | 2008-01-08 |
| 7285829 | Semiconductor device having a laterally modulated gate workfunction and method of fabrication | Brian S. Doyle, Scott A. Hareland, Mark L. Doczy | 2007-10-23 |
| 7279375 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy +3 more | 2007-10-09 |
| 7268058 | Tri-gate transistors and methods to fabricate same | Suman Datta, Brian S. Doyle, Been-Yih Jin | 2007-09-11 |
| 7241653 | Nonplanar device with stress incorporation layer and method of fabrication | Scott A. Hareland, Brian S. Doyle, Suman Datta, Been-Yih Jin | 2007-07-10 |
| 7235809 | Semiconductor channel on insulator structure | Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz +3 more | 2007-06-26 |
| 7226831 | Device with scavenging spacer layer | Matthew V. Metz, Mark L. Doczy, Justin K. Brask | 2007-06-05 |
| 7223679 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Been-Yih Jin +1 more | 2007-05-29 |
| 7220635 | Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +3 more | 2007-05-22 |
| 7217611 | Methods for integrating replacement metal gate structures | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Scott A. Hareland, Matthew V. Metz +1 more | 2007-05-15 |
| 7208361 | Replacement gate process for making a semiconductor device that includes a metal gate electrode | Uday Shah, Chris Barns, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros +1 more | 2007-04-24 |
| 7193279 | Non-planar MOS structure with a strained channel region | Brian S. Doyle, Suman Datta, Been-Yih Jin | 2007-03-20 |