Issued Patents All Time
Showing 376–400 of 495 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7193253 | Transition metal alloys for use as a gate electrode and devices incorporating these alloys | Mark L. Doczy, Nathan E. Baxter, Kari Harkonen, Teemu Lang | 2007-03-20 |
| 7192890 | Depositing an oxide | Ying Zhou, Matthew V. Metz, Justin K. Brask, John Burghard, Markus Kuhn +1 more | 2007-03-20 |
| 7192856 | Forming dual metal complementary metal oxide semiconductor integrated circuits | Mark L. Doczy, Lawrence Wong, Valery M. Dubin, Justin K. Brask, Jack T. Kavalieros +2 more | 2007-03-20 |
| 7183184 | Method for making a semiconductor device that includes a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Uday Shah, Chris Barns | 2007-02-27 |
| 7180109 | Field effect transistor and method of fabrication | Doulgas Barlage, Been-Yih Jin | 2007-02-20 |
| 7176075 | Field effect transistor and method of fabrication | Doulgas Barlage, Been-Yih Jin | 2007-02-13 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2007-02-13 |
| 7170120 | Carbon nanotube energy well (CNEW) field effect transistor | Suman Datta, Marko Radosavljevic, Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask +1 more | 2007-01-30 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric | Reza Arghavani, Mark L. Doczy | 2007-01-23 |
| 7160767 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Mark L. Doczy, Matthew V. Metz | 2007-01-09 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz, Suman Datta +1 more | 2007-01-09 |
| 7157378 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Chris Barns, Mark L. Doczy, Uday Shah, Jack T. Kavalieros +3 more | 2007-01-02 |
| 7153784 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2006-12-26 |
| 7153734 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2006-12-26 |
| 7148548 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask, Suman Datta | 2006-12-12 |
| 7148099 | Reducing the dielectric constant of a portion of a gate dielectric | Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask | 2006-12-12 |
| 7145246 | Method of fabricating an ultra-narrow channel semiconductor device | Scott A. Hareland | 2006-12-05 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension | Suman Datta, Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz | 2006-12-05 |
| 7138305 | Method and apparatus for improving stability of a 6T CMOS SRAM cell | Suman Datta, Brian S. Doyle, Jack T. Kavalieros, Bo Zheng, Scott A. Hareland | 2006-11-21 |
| 7138316 | Semiconductor channel on insulator structure | Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz +3 more | 2006-11-21 |
| 7138323 | Planarizing a semiconductor structure to form replacement metal gates | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Uday Shah, Chris Barns +2 more | 2006-11-21 |
| 7129182 | Method for etching a thin metal layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +1 more | 2006-10-31 |
| 7126199 | Multilayer metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Chris Barns, Matthew V. Metz +1 more | 2006-10-24 |
| 7125762 | Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +1 more | 2006-10-24 |
| 7105390 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian S. Doyle, Mark L. Doczy | 2006-09-12 |