Issued Patents All Time
Showing 326–350 of 396 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8952541 | Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes | Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau | 2015-02-10 |
| 8936976 | Conductivity improvements for III-V semiconductor devices | Marko Radosavljevic, Prashant Majhi, Jack T. Kavalieros, Niti Goel, Wilman Tsai +3 more | 2015-01-20 |
| 8890264 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Robert S. Chau, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty | 2014-11-18 |
| 8890118 | Tunnel field effect transistor | Benjamin Chu-Kung, Marko Radosavljevic, Niloy Mukherjee | 2014-11-18 |
| 8890120 | Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more | 2014-11-18 |
| 8878363 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick, Robert S. Chau | 2014-11-04 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Niti Goel +8 more | 2014-10-28 |
| 8872160 | Increasing carrier injection velocity for integrated circuit devices | Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2014-10-28 |
| 8846480 | Carrier mobility in surface-channel transistors, apparatus made therewith, and system containing same | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros | 2014-09-30 |
| 8823059 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee | 2014-09-02 |
| 8803255 | Gate electrode having a capping layer | Mark L. Doczy, Suman Datta, Justin K. Brask, Matthew V. Metz | 2014-08-12 |
| 8785907 | Epitaxial film growth on patterned substrate | Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Van H. Le, Matthew V. Metz +11 more | 2014-07-22 |
| 8785909 | Non-planar semiconductor device having channel region with low band-gap cladding layer | Marko Radosavljevic, Benjamin Chu-Kung, Dipanjan Basu, Sanaz K. Gardner, Satyarth Suri +4 more | 2014-07-22 |
| 8765563 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2014-07-01 |
| 8748269 | Quantum-well-based semiconductor devices | Marko Radosavljevic, Ravi Pillarisetty, Robert S. Chau, Matthew V. Metz | 2014-06-10 |
| 8716751 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2014-05-06 |
| 8710490 | Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer | Ravi Pillarisetty, Niti Goel, Han Wui Then, Van H. Le, Willy Rachmady +2 more | 2014-04-29 |
| 8633470 | Techniques and configurations to impart strain to integrated circuit devices | Marko Radosavljevic, Niloy Mukherjee, Ravi Pillarisetty | 2014-01-21 |
| 8633471 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Jack T. Kavalieros | 2014-01-21 |
| 8592803 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yin Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2013-11-26 |
| 8575596 | Non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more | 2013-11-05 |
| 8536621 | Quantum-well-based semiconductor devices | Marko Radosavljevic, Ravi Pillarisetty, Robert S. Chau, Matthew V. Metz | 2013-09-17 |
| 8501508 | Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains | Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic +2 more | 2013-08-06 |
| 8440998 | Increasing carrier injection velocity for integrated circuit devices | Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2013-05-14 |
| 8415751 | Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain | Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau, Matthew V. Metz | 2013-04-09 |