Issued Patents All Time
Showing 51–75 of 195 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Harold W. Kennel +4 more | 2021-04-20 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2021-03-16 |
| 10930500 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more | 2021-02-23 |
| 10847656 | Fabrication of non-planar IGZO devices for improved electrostatics | Van H. Le, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic +4 more | 2020-11-24 |
| 10784170 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2020-09-22 |
| 10748993 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2020-08-18 |
| 10734511 | High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer | Cheng-Ying Huang, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey +1 more | 2020-08-04 |
| 10734488 | Aluminum indium phosphide subfin germanium channel transistors | Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Van H. Le, Jack T. Kavalieros +1 more | 2020-08-04 |
| 10727339 | Selectively regrown top contact for vertical semiconductor devices | Gilbert Dewey, Van H. Le, Jack T. Kavalieros, Marko Radosavljevic, Ravi Pillarisetty +3 more | 2020-07-28 |
| 10727138 | Integration of single crystalline transistors in back end of line (BEOL) | Van H. Le, Marko Radosavljevic, Rafael Rios, Gilbert Dewey | 2020-07-28 |
| 10693008 | Cladding layer epitaxy via template engineering for heterogeneous integration on silicon | Niloy Mukherjee, Marko Radosavljevic, Jack T. Kavalieros, Ravi Pillarisetty, Niti Goel +2 more | 2020-06-23 |
| 10692973 | Germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2020-06-23 |
| 10665688 | Low Schottky barrier contact structure for Ge NMOS | Willy Rachmady, Matthew V. Metz, Van H. Le, Gilbert Dewey, Ashish Agrawal +1 more | 2020-05-26 |
| 10644112 | Systems, methods and devices for isolation for subfin leakage | Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal, Harold W. Kennel +5 more | 2020-05-05 |
| 10644111 | Strained silicon layer with relaxed underlayer | Van H. Le, Ashish Agrawal, Jack T. Kavalieros, Matthew V. Metz, Seung Hoon Sung +2 more | 2020-05-05 |
| 10580895 | Wide band gap transistors on non-native semiconductor substrates | Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung +2 more | 2020-03-03 |
| 10580882 | Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Van H. Le +1 more | 2020-03-03 |
| 10573717 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2020-02-25 |
| 10541305 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2020-01-21 |
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more | 2019-11-12 |
| 10475888 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic +1 more | 2019-11-12 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Van H. Le, Matthew V. Metz, Willy Rachmady +2 more | 2019-09-03 |
| 10388733 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |
| 10325774 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more | 2019-06-18 |