Issued Patents All Time
Showing 26–48 of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11335793 | Vertical tunneling field-effect transistors | Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady +2 more | 2022-05-17 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Willy Rachmady +1 more | 2022-05-10 |
| 11322620 | Metal-assisted single crystal transistors | Van H. Le, Seung Hoon Sung, Abhishek A. Sharma, Ravi Pillarisetty | 2022-05-03 |
| 11276644 | Integrated circuits and methods for forming thin film crystal layers | Carl Naylor, Kevin Lin, Abhishek A. Sharma, Mauro J. Kobrinsky, Christopher J. Jezewski +1 more | 2022-03-15 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more | 2022-02-08 |
| 11233148 | Reducing band-to-band tunneling in semiconductor devices | Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Harold W. Kennel +4 more | 2022-01-25 |
| 11195924 | Broken bandgap contact | Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz +1 more | 2021-12-07 |
| 11164785 | Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material | Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Anand S. Murthy, Ryan Keech +1 more | 2021-11-02 |
| 11164809 | Integrated circuits and methods for forming integrated circuits | Carl Naylor, Kevin Lin, Abhishek A. Sharma, Mauro J. Kobrinsky, Christopher J. Jezewski +1 more | 2021-11-02 |
| 11152290 | Wide bandgap group IV subfin to reduce leakage | Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +1 more | 2021-10-19 |
| 11031499 | Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current | Willy Rachmady, Van H. Le, Matthew V. Metz, Benjamin Chu-Kung, Jack T. Kavalieros | 2021-06-08 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Benjamin Chu-Kung +3 more | 2021-06-01 |
| 10998270 | Local interconnect for group IV source/drain regions | Seung Hoon Sung, Glenn A. Glass, Van H. Le, Benjamin Chu-Kung, Anand S. Murthy +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Van H. Le, Benjamin Chu-Kung, Harold W. Kennel +4 more | 2021-04-20 |
| 10847656 | Fabrication of non-planar IGZO devices for improved electrostatics | Van H. Le, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic +4 more | 2020-11-24 |
| 10784352 | Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench | Sanaz K. Gardner, Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim +1 more | 2020-09-22 |
| 10665688 | Low Schottky barrier contact structure for Ge NMOS | Willy Rachmady, Matthew V. Metz, Benjamin Chu-Kung, Van H. Le, Gilbert Dewey +1 more | 2020-05-26 |
| 10644111 | Strained silicon layer with relaxed underlayer | Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Matthew V. Metz, Seung Hoon Sung +2 more | 2020-05-05 |
| 10644112 | Systems, methods and devices for isolation for subfin leakage | Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Harold W. Kennel +5 more | 2020-05-05 |
| 10593785 | Transistors having ultra thin fin profiles and their methods of fabrication | Sanaz K. Gardner, Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim +1 more | 2020-03-17 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Benjamin Chu-Kung, Van H. Le, Matthew V. Metz, Willy Rachmady +2 more | 2019-09-03 |
| 10347767 | Transistor with a subfin layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Ravi Pillarisetty, Gilbert Dewey +1 more | 2019-07-09 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Matthew V. Metz, Willy Rachmady +8 more | 2019-04-02 |