Issued Patents All Time
Showing 101–125 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10756216 | Nanosheet mosfet with isolated source/drain epitaxy and close junction proximity | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2020-08-25 |
| 10749038 | Width adjustment of stacked nanowires | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2020-08-18 |
| 10741557 | Hybrid high mobility channel transistors | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-08-11 |
| 10734287 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-08-04 |
| 10734477 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2020-08-04 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-08-04 |
| 10727345 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2020-07-28 |
| 10680061 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2020-06-09 |
| 10679890 | Nanosheet structure with isolated gate | Alexander Reznicek, Joshua M. Rubin | 2020-06-09 |
| 10669579 | DNA sequencing with stacked nanopores | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-06-02 |
| 10672888 | Vertical transistors having improved gate length control | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-06-02 |
| 10665694 | Vertical transistors having improved gate length control | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-05-26 |
| 10665666 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-05-26 |
| 10658387 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2020-05-19 |
| 10658246 | Self-aligned vertical fin field effect transistor with replacement gate structure | Chen Zhang, Tenko Yamashita, Kangguo Cheng, Juntao Li | 2020-05-19 |
| 10658481 | Self-aligned gate cut in direct stacked vertical transport field effect transistor (VTFET) | Chen Zhang, Tenko Yamashita, Kangguo Cheng | 2020-05-19 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Wenyu Xu, Chen Zhang | 2020-05-19 |
| 10658461 | Nanowire with sacrificial top wire | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2020-05-19 |
| 10644150 | Tunnel field-effect transistor with reduced subthreshold swing | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-05-05 |
| 10636895 | Vertical transport field effect transistor on silicon with defined junctions | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-04-28 |
| 10622454 | Formation of a semiconductor device with RIE-free spacers | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10622354 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10622264 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10615267 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-07 |
| 10615258 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-04-07 |