Issued Patents All Time
Showing 76–100 of 323 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10937862 | Nanosheet substrate isolated source/drain epitaxy via airgap | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2021-03-02 |
| 10930778 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-02-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10910482 | Nanosheet with changing SiGe percentage for SiGe lateral recess | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-02-02 |
| 10910372 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-02-02 |
| 10903358 | Vertical fin field effect transistor with reduced gate length variations | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2021-01-26 |
| 10903337 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Wenyu Xu, Peng Xu | 2021-01-26 |
| 10903212 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-26 |
| 10903123 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-01-26 |
| 10902910 | Phase change memory (PCM) with gradual reset characteristics | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-01-26 |
| 10886384 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-05 |
| 10886391 | Single-electron transistor with wrap-around gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-01-05 |
| 10886368 | I/O device scheme for gate-all-around transistors | Jingyun Zhang, Alexander Reznicek, Choonghyun Lee | 2021-01-05 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Alexander Reznicek, Shogo Mochizuki, Jingyun Zhang | 2021-01-05 |
| 10840381 | Nanosheet and nanowire MOSFET with sharp source/drain junction | Josephine B. Chang, Kangguo Cheng, Michael A. Guillorn | 2020-11-17 |
| 10833176 | Selectively formed gate sidewall spacer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-11-10 |
| 10833073 | Vertical transistors with different gate lengths | Chen Zhang, Kangguo Cheng, Juntao Li | 2020-11-10 |
| 10833157 | iFinFET | Juntao Li, Kangguo Cheng, Chen Zhang | 2020-11-10 |
| 10832969 | Single-fin CMOS transistors with embedded and cladded source/drain structures | Choonghyun Lee, Shogo Mochizuki, Hemanth Jagannathan | 2020-11-10 |
| 10833158 | III-V segmented finFET free of wafer bonding | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-11-10 |
| 10811495 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-10-20 |
| 10796967 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-10-06 |
| 10796966 | Vertical FET with various gate lengths by an oxidation process | Kangguo Cheng, Chen Zhang | 2020-10-06 |
| 10784364 | Nanosheet with changing SiGe pecentage for SiGe lateral recess | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-09-22 |
| 10777469 | Self-aligned top spacers for vertical FETs with in situ solid state doping | Ruqiang Bao, Junli Wang, Brent A. Anderson | 2020-09-15 |